Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.

Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Abstract: A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer.

Abstract: Implementations disclosed herein provide a method comprising rocking an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure, wherein an angular amplitude of rocking the effective annealing magnetic field between a first positive angle and a second negative angle gradually decreases towards the desired orientation of pinning in the AFM/PL structure.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: The present invention relates to a head having an air bearing surface for confronting the surface of a storage medium. The head includes a first pole that is spaced apart from a second pole. At least one non-magnetic spacer is positioned between the first pole and the second pole such that the first pole is magnetically decoupled from the second pole. In a further aspect, one or both of the first pole and the second pole can be elliptical in shape.