Abstract: A lens unit includes a lens barrel for receiving at least one lens and a motor arranged to displace the lens barrel between various positions. Displacement of the lens barrel is proportional to an electrical signal applied to the motor. A first conductor is fixed to the lens barrel and is arranged to make electrical contact with a second conductor when the lens barrel is at an initial position. A processor is arranged to detect a change in the electrical contact, to determine an electrical signal at the time of the change and to generate an electrical signal corresponding to the desired displacement.

Abstract: A method of controlling a moving part of a voice coil motor to move from an first position to a second position, wherein the position of the moving part is controlled by the level of an electrical signal applied to a coil of the voice coil motor, a first level of the electrical signal corresponding to the first position, and a second level of the electrical signal corresponding to the second position, the method including: at a first time, changing the electrical signal from the first level to an intermediate level, the intermediate level being chosen such that a peak overshoot of the moving part corresponds to the second position; and at a second time calculated to correspond to a delay of half an oscillation period of the moving part after the first time, changing the electrical signal to the second level.

Abstract: The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.

Abstract: A lens unit including a lens barrel for receiving at least one lens, a motor arranged to displace the lens barrel between an initial position and a maximum displacement, wherein the displacement of a lens barrel is proportional to the level of an electrical signal applied to the motor when the electrical signal is between first and second levels, the first level corresponding to a level for starting movement of the lens barrel from the initial position and the second level corresponding to a level for bringing the lens barrel to the maximum displacement; a first conductor fixed to the lens barrel and arranged to make electrical contact with a second conductor when said lens barrel is at one of said initial position and said maximum displacement; and a processor arranged to detect a change in the contact situation between the first and second conductive surfaces, to determine one of said first and second levels based on level of the electrical signal at the time of the change and to generate, based on said det

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner.

Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes.

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

Abstract: The present invention concerns an image sensor having a plurality of pixels each including a photosensor, a first node having a first capacitance connected to the photosensor, a second node having a second capacitance and selectively connected to the photosensor, and reading circuitry operable to read independently a first voltage value stored at the first node and a second voltage value stored at the second node.

Abstract: The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.

Abstract: A light sensing cell comprising output circuitry for generating an output voltage depending on the voltage of a sensing node, the voltage of the sensing node varying as a function of a received light; a reset transistor operable to force the voltage of the sensing node to a reset voltage; a feedback loop including an operational amplifier operable to add through a capacitive voltage divider a correction voltage to the voltage of the sensing node, said correction voltage depending on the output voltage; and preset mean circuitry for, during the operation of the reset transistor and until the amplifier is operated, setting the input of the capacitive voltage divider to a predetermined voltage.

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure consists of includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate.

Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes.

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology consisting including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

Abstract: A light sensing cell comprising output means (T1, T2) for generating an output voltage depending on the voltage of a sensing node (2), the voltage of the sensing node varying as a function of a received light; a reset transistor (T3) operable to force the voltage of the sensing node (2) to a reset voltage; a feedback loop comprising an operational amplifier (A1) operable to add through a capacitive voltage divider (C3, C4) a correction voltage to the voltage of the sensing node (2), said correction voltage depending on the output voltage; and preset means (T5) for, during the operation of the reset transistor (T3) and until the amplifier (A1) is operated, setting the input of the capacitive voltage divider (C3, C4) to a predetermined voltage (Vinit).

Abstract: To avoid the overexposure and underexposure of pixels which occurs with high image contrasts, each pixel contains a local autoadaptive control. With the help of this control, each pixel automatically ends its integration period as soon as it has integrated enough photoelectric current. An analog signal represents the length of the integration period selected by the pixel. Together with the integrated pixel signal, it represents brightness information with high dynamics and with low requirements regarding the dynamics of the individual signals. Because of their local adaptivity, the image sensors are suitable for all applications where high brightness contrasts must be processed, such as guiding a motor vehicle in highway traffic, nature films and astronomy.

Abstract: The invention relates to an optical sensor consisting of an arrangement of pixel units, each comprising an optoelectronic converter for converting the incident radiation into a photoelectric current that depends on intensity and wavelength, an integrator median for deriving a measured value corresponding to the photoelectric current detected, and a controllable storage device for storing the measured value, and a readout control device for readout of the stored measured values based on one pixel unit, where the image striking the sensor can be assembled from the measured values based on pixel units.