Patents by Inventor Tarik Kriem

Tarik Kriem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT REGION
    Patent number: 6806124
    Abstract: A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact material or the organic semiconductor material, and an intermediate layer is applied thereon, the intermediate layer containing a reactive dopant. Afterward, a body made of the organic semiconductor material or the contact material is fabricated on the intermediate layer. The dopant contained in the intermediate layer effects a region-selective doping of the organic semiconductor material and, as a consequence, a significant reduction of the contact resistance for the transition of charge carriers between the contact material and the organic semiconductor material.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: October 19, 2004
    Assignee: Infineon Technologies AG
    Inventors: Hagen Klauk, Günter Schmid, Tarik Kriem
  • Method for reducing the contact resistance in organic field-effect transistors by applying a reactive intermediate layer which dopes the organic semiconductor layer region-selectively in the contact region
    Publication number: 20030092232
    Abstract: A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact material or the organic semiconductor material, and an intermediate layer is applied thereon, the intermediate layer containing a reactive dopant. Afterward, a body made of the organic semiconductor material or the contact material is fabricated on the intermediate layer. The dopant contained in the intermediate layer effects a region-selective doping of the organic semiconductor material and, as a consequence, a significant reduction of the contact resistance for the transition of charge carriers between the contact material and the organic semiconductor material.
    Type: Application
    Filed: October 31, 2002
    Publication date: May 15, 2003
    Inventors: Hagen Klauk, Gunter Schmid, Tarik Kriem