Abstract: A linear motor coil assembly (12) comprises a plurality of coils (14) arranged in a line in a direction of movement and having respective coil shafts perpendicular to the direction of movement of the motor is provided. A flat cooling tube (20) is arranged to meander inside the plurality of coils. The cooling tube has a cross section elongated in a direction parallel to the coil axes, and a plurality of clearance holes (25) through which coolant flows are formed inside the cooling tube. The cooling tube has interleaved folds at least equal in number to the number of coils. The coils being fitted into these folds. At the time of manufacture of the coil assembly, the coils are wound around cores that are divided for each coil, and the cores are inserted into the folds of the cooling tube. A method of manufacturing a linear motor assembly having the aforesaid cooling tube is also disclosed.

Abstract: In a linear motor coil assembly (12), and a method for manufacturing the same, a plurality of coils (14) are arranged in a line in a direction of movement and have respective coil axes perpendicular to the direction of movement of the motor. A flat cooling tube (20) is arranged to meander inside the plurality of coils. The cooling tube has a cross section elongated in a direction parallel to the coil axes, and a plurality of clearance holes (25) through which coolant flows are formed inside the cooling tube. The cooling tube has interleaved folds at least equal in number to the number of coils. The coils being fitted into these folds. At the time of manufacture of the coil assembly, the coils are wound around cores that are divided for each coil, and the cores are inserted into the folds of the cooling tube.

Abstract: In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and

Abstract: A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

Abstract: In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and