Patents by Inventor Taro Noshiguchi

Taro Noshiguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
    Publication number: 20120003811
    Abstract: A first silicon carbide substrate has a first front-side surface and a first side surface. A second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces of the first and second silicon carbide substrates is disposed between the first side surface and the second side surface. A closing portion is provided to close the gap over the opening. By depositing sublimates from the first and second side surfaces onto the closing portion, a connecting portion is formed to connect the first and second side surfaces to each other so as to close the opening. After the step of forming the connecting portion, the closing portion is removed.
    Type: Application
    Filed: September 28, 2010
    Publication date: January 5, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Makoto Sasaki, Shin Harada, Taro Noshiguchi, Kyoto Okita, Hideto Tamaso, Yasuo Namikawa