Abstract: A thin film magnetic head having excellent recording characteristics is provided. In a structure of the thin film magnetic head, a thickness LT (&mgr;m) of a top pole chip and a distance LD (&mgr;m) between a position of a front edge surface of a top yoke and a position of an air bearing surface arm adapted to satisfy LD≧LT−2.0 (&mgr;m) (LD≧0, LT<0). In the thin film magnetic head having such structural features, the above-mentioned thickness LT and distance LD having an influence upon recording characteristics are optimized, and thus the occurrence of side erase during recording can be prevented.

Abstract: A GMR head comprising a spin valve GMR film, which has a free layer containing a Co containing magnetic layer, and a hard magnetic biasing film for inputting a bias magnetic field to the spin valve GMR film. The hard magnetic biasing film is constituted of a film formed by laminating a hard magnetic layer on the magnetic under layer. The hard magnetic layer is disposed adjoining to edge portion of the spin valve GMR film through the magnetic under layer. The magnetic under layer has saturation magnetization Ms.sup.under which satisfies at least one condition of Ms.sup.under .gtoreq.Ms.sup.free and Ms.sup.under .gtoreq.Ms.sup.hard when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard. In a MR head of this abutted junction structure, even when the track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.

Abstract: A magnetoresistance effect head comprises a giant magnetoresistance effect film, a pair of leads to supply an electric current to the giant magnetoresistance effect head, and upper and lower magnetic shielding layers made of a crystalline soft magnetic film and disposed to hold the giant magnetoresistance effect film therebetween with a magnetic gap film intervened, wherein the surface roughness of an under layer of the giant magnetoresistance effect film is determined so that a center period L of the surface roughness satisfies L>70 nm.

Abstract: According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs.

Abstract: This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.