Abstract: There is provided an chuck assembly including: a ceramic plate having a top surface on which a wafer is to be placed and a bottom surface facing the top surface and incorporating an internal electrode that is an ESC electrode and/or an RF electrode; a cooling plate mounted to the bottom surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the bottom surface to the top surface; a gas passage plug press-fitted into the plug placement hole and configured to allow gas to pass therethrough; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. A side surface of at least one of the gas passage plug and the plug placement hole is composed of a low secondary electron emission coefficient (SEEC) material having an SEEC of 5.0 or lower.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate, plug placement holes and a plug. The plug has a gas flow path. The gas flow path has an upper gas flow path portion which proceeds obliquely upward and reaches an outlet. When a longitudinal section of a peripheral portion of the plug is viewed, a maximum length in an up-down direction between an open edge of the outlet and a bottom surface of the upper gas flow path portion is d1 [?m], a length in an up-down direction between an object support surface and an upper surface of the plug is dr [?m], a maximum length in an up-down direction, in a portion upstream of the upper gas flow path portion, of the gas flow path is d2 [?m], and D=d1+d2. The following are satisfied: 30 ? d ? 1 ? 100 , 10 ? dr ? 50 , 100 ? d ? 2 ? 200 ? and ? ? "\[LeftBracketingBar]" d ? 2 - D ? "\[RightBracketingBar]" ? 50.

Abstract: There is provided an electrostatic chuck assembly including a ceramic plate having a top surface on which a wafer is to be placed and a bottom surface facing the top surface and incorporating an internal electrode that is an ESC electrode and/or an RF electrode; a cooling plate mounted to the bottom surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the bottom surface to the top surface; a gas passage plug provided so as to block the plug placement hole and configured to allow gas to pass therethrough; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. At least a part of a surface capable of coming into contact with gas inside the gas passage plug is composed of a low secondary electron emission coefficient (SEEC) material having an SEEC of 5.0 or lower.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface, a cooling plate having a refrigerant flow path and being provided on a lower surface-side of the ceramic plate; a first ceramic plate penetration section that reaches the wafer placement surface; a second ceramic plate penetration section that reaches the wafer placement surface; a first gas passage that communicates with the first ceramic plate penetration section; and a second gas passage that communicates with the second ceramic plate penetration section. The first gas passage has a first gas intermediate passage, the second gas passage has a second gas intermediate passage, the second gas intermediate passage is provided above the first gas intermediate passage, and the refrigerant flow path has a first flow path section provided above the first gas intermediate passage, and a second flow path section provided below the second gas intermediate passage.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having an object support surface capable of supporting an object; a plug placement hole penetrating the ceramic plate; and a plug arranged in the plug placement hole and having a gas flow path formed so as to extend from an inlet to an outlet, wherein, when the plug is viewed in longitudinal section, a length in an up-down direction of the gas flow path is d1 [mm], a length in an up-down direction of the plug body between the gas flow paths is d2 [mm], a relative permittivity of the plug body is ?r, and a number of the gas flow paths arranged in the up-down direction in the longitudinal section of the plug is x [pieces], the member for semiconductor manufacturing apparatus satisfying: F = ? ? r * d ? 1 / { x * ( ? ? r * d ? 1 + d ? 2 ) } ? 0.

Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate disposed on a lower-surface side of the ceramic plate; a joint layer joining the ceramic plate and the electrically conductive plate; a ceramic plate penetrating portion extending through the ceramic plate; an insulating gas passage plug provided in the ceramic plate penetrating portion and allowing gas to pass through its interior; a gas introduction passage provided at least inside the joint layer and the electrically conductive plate, and communicating with the ceramic plate penetrating portion; and wherein the joint layer has a structure in which an insulator layer and an electrically conductive layer are laminated, and the electrically conductive layer is exposed in a joint layer penetrating portion which is a portion of the gas introduction passage that penetrates the joint layer.

Abstract: A wafer placement table includes a ceramic body having a wafer placement surface and a focus ring placement surface located radially outside the wafer placement surface, the ceramic body having an electrode built therein; a focus ring having conductive and placed on the focus ring placement surface; a plug disposition hole located below the focus ring and penetrating the ceramic body; and a plug provided in the plug disposition hole and allowing gas to pass through an interior thereof, wherein the focus ring has a lower surface, and the lower surface has a recessed portion for pooling gas at a position opposed to the plug, and an upper surface of the plug is disposed within the recessed portion and is located at a position higher than the lower surface of the focus ring.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface, a cooling plate having a refrigerant flow path and being provided on a lower surface-side of the ceramic plate; a first ceramic plate penetration section that reaches the wafer placement surface; a second ceramic plate penetration section that reaches the wafer placement surface; a first gas passage that communicates with the first ceramic plate penetration section; and a second gas passage that communicates with the second ceramic plate penetration section. The first gas passage has a first gas intermediate passage, the second gas passage has a second gas intermediate passage, the second gas intermediate passage is provided above the first gas intermediate passage, and the refrigerant flow path has a first flow path section provided above the first gas intermediate passage, and a second flow path section provided below the second gas intermediate passage.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path; a base plate through-hole provided between adjacent parts of the refrigerant flow path, and configured to penetrate the base plate in an up-down direction; an insulating tube provided in the base plate through-hole, and fixed; and a ceramic plate hole open to the lower surface of the ceramic plate, and provided to communicate with an inside of the insulating tube, wherein a wall thickness of the insulating tube continuously varies in a circumferential direction of the insulating tube.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate having on its upper surface at least one of a wafer placement surface or a focus-ring placement surface; a plug-receiving hole penetrating the ceramic plate in an up-down direction and having a tapered inner peripheral surface whose lower side narrows; and a plug fitted in the plug-receiving hole, the plug having a tapered outer peripheral surface whose lower side narrows and allowing gas to flow in the up-down direction; wherein an outer peripheral surface of the plug is gentler than an inner peripheral surface of the plug-receiving hole.

Abstract: A member for a semiconductor manufacturing apparatus includes: a ceramic plate having on its upper surface at least one of a wafer placement surface or a focus-ring placement surface; a plug-receiving hole penetrating the ceramic plate in an up-down direction and having a tapered inner peripheral surface whose lower side narrows; and a plug fitted in the plug-receiving hole, the plug having a tapered outer peripheral surface whose lower side narrows and allowing gas to flow in the up-down direction; wherein an outer peripheral surface of the plug is steeper than an inner peripheral surface of the plug-receiving hole.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface; a cooling plate provided on a lower surface of the ceramic plate; and a refrigerant flow path provided inside the cooling plate, wherein the refrigerant flow path includes a first portion and a second portion, the second portion continuing from the first portion and being divided into two or more ways forming branches that run side by side, and wherein the first portion has a cross-sectional area smaller than a sum of cross-sectional areas of the respective branches included in the second portion.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include built-in refrigerant flow paths; a through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the through-hole; and a resin-containing adhesive layer provided at least one of between an upper surface of the insulating tube and a lower surface of the ceramic plate or between an outer circumferential surface of the insulating tube and an inner circumferential surface of the through-hole, and configured to fix the insulating tube. A thermal conductivity of the insulating tube is less than or equal to 10 W/mK.

Abstract: A feeder member is used to supply electricity to an electrode embedded in a ceramic base. The feeder member includes an electrode-side terminal that is made of a high-melting-point metal containing material and joined to the electrode, an intermediate member that is made of a Cu containing material and directly joined to the electrode-side terminal without using a brazing material, a cable support member that is made of a Cu containing material and joined to the intermediate member, and a cable that is made of a Cu containing material and that has one end whose end surface is welded to the cable support member.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole.

Abstract: A wafer placement table includes a ceramic plate; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided at the ceramic plate penetrating part; a gas introduction passage provided at least inside the electrically conductive plate; and an electrically conductive gas passage part provided in the gas introduction passage, the electrically conductive gas passage part being in contact with a bottom surface of the electrically insulating gas passage plug, the electrically conductive gas passage part being electrically continuous with the electrically conductive plate, the electrically conductive gas passage part allowing gas to pass between the electrically insulating gas passage plug and the gas introduction passage, wherein the electrically conductive gas passage part has a plate spring that presses the electrically insulating gas passage plug upward with elastic fo

Abstract: A wafer placement table includes a resin layer joining a ceramic plate and a conductive plate. The ceramic plate has an insulative gas passage plug. The resin layer has a resin layer through portion that is larger than the insulative gas passage plug in plan view. The conductive plate has a gas introduction path communicating with the insulative gas passage plug via the resin layer through portion. A conductive film is provided in the lower surface of the ceramic plate and is larger than the resin layer through portion in plan view. A conductive connecting portion is provided in the gas introduction path and is smaller than the resin layer through portion in plan view. The conductive connecting portion electrically connects the conductive film and the conductive plate to each other and allows the gas to flow from the gas introduction path to the insulative gas passage plug.

Abstract: A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed, and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate; and a plug embedded in the plug placement hole; wherein the plug is composed of a dense body and has an upper end surface exposed on a side of the upper surface, a lower end surface exposed on a side of the lower surface, and a gas passage extending from an upper end opening provided on the upper end surface, through an inside of the dense body, to a lower end opening provided on the lower end surface, and wherein the gas passage is provided with a reinforcing rib that divides the upper end opening into a plurality of segments.

Abstract: A member for a semiconductor manufacturing equipment that uses a discharge suppression technology different from conventional ones is provided. A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate; and a plug embedded in the plug placement hole; wherein the plug is composed of a dense body, including an upper end surface exposed on a side of the upper surface, a lower end surface exposed on a side of the lower surface, and a gas passage; and wherein a maximum height D1 in the vertical direction from the upper end opening to a surface of the gas passage, and a maximum height D2 from the lower end opening to the surface of the gas passage satisfies a relationship: D1<D2.