Abstract: To shorten the response time during falling time of making a transition from a state in which a horizontal field passes through a liquid crystal layer to a state in which the horizontal field does not pass through the liquid crystal layer without necessitating a complicated structure of an electrode for generating the horizontal field. A first alignment film has a main surface having an alignment capability of aligning liquid crystal molecules in a particular alignment direction. A partition is arranged on at least a first field concentrated part at a first pixel electrode, and a second field concentrated part at the second pixel electrode. A surface of a second alignment film covering the partition has an alignment capability of aligning the liquid crystal molecules in the particular alignment direction. The partition partitions the liquid crystal layer in a direction parallel to an extension direction of the liquid crystal layer.

Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.

Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.