Patents by Inventor Taroh Inada

Taroh Inada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160372740
    Abstract: An object of the present invention is to provide a positive electrode mixture capable of conducting stable charging and discharging with a less amount of gasses generated which has an operating voltage or an initial crystal phase transition voltage of not less than 4.5 V on the basis of lithium. The present invention relates to a positive electrode mixture comprising carbon black having a bulk density of not more than 0.1 g/cm3, a crystallite size of 10 to 40 ?, an iodine adsorption of 1 to 150 mg/g, a volatile content of not more than 0.1% and a metal impurity content of not more than 20 ppm, and a positive electrode active substance having an operating voltage or an initial crystal phase transition voltage of not less than 4.5 V on the basis of lithium.
    Type: Application
    Filed: February 24, 2015
    Publication date: December 22, 2016
    Inventors: Akihisa KAJIYAMA, Teruaki SANTOKI, Daisuke MORITA, Ryuta MASAKI, Takahiko SUGIHARA, Tsuyoshi WAKIYAMA, Kazutoshi MATSUMOTO, Akira YODA, Taroh INADA, Hiroshi YOKOTA, Takashi KAWASAKI
  • Patent number: 5387545
    Abstract: An impurity diffusion method which can control a surface atomic concentration from a low to a high surface atomic concentration with a good uniformity is provided. Natural oxide is removed from the surface of a semiconductor substrate with a deoxidizing atmosphere gas as a diffusion atmosphere gas in advance, and then an impurity gas is passed thereto, while passing the deoxidizing atmosphere gas thereto, thereby conducting the diffusion. Flow rate or concentration of impurity of the impurity gas is so set that the impurity atomic concentration of the diffusion layer can be controlled by the flow rate or the concentration of impurity of the impurity gas. The impurity atomic concentration of the diffusion layer can be controlled by adjusting the flow rate or concentration of impurity of the impurity gas, and a diffusion layer having a low impurity atomic concentration can be formed. A shallow junction having a depth of not more than 50 nm can be formed.
    Type: Grant
    Filed: December 12, 1991
    Date of Patent: February 7, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Yukihiro Kiyota, Tohru Nakamura, Takahiro Onai, Taroh Inada