Patents by Inventor TARUN KUMAR SHARMA

TARUN KUMAR SHARMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APTAMER AGAINST M.TB MPT51 AND USES THEREOF
    Publication number: 20200283774
    Abstract: The invention provides single stranded DNA aptamers specific to M.tb MPT51 and uses thereof in rapid, robust, highly specific, and cost effective diagnosis of tuberculosis. The invention also provides methods and devices based on the aptamers of the invention for the diagnosis of tuberculosis. Advantageously, aptamers of the present invention can selectively detect as low as 2 ng of M.tb MPT51 and this activity remains unaltered in presence of anti-MPT51 antibodies. The developed device can give sample-to-answer within 30 minutes.
    Type: Application
    Filed: September 7, 2018
    Publication date: September 10, 2020
    Applicants: TRANSLATIONAL HEALTH SCIENCE AND TECHNOLOGY INSTITUTE, ALL INDIA INSTITUTE OF MEDICAL SCIENCES, APTABHARAT INNOVATION PRIVATE LIMITED
    Inventors: Tarun KUMAR SHARMA, Jaya SIVASWAMI TYAGI, Ritu DAS, Abhijeet DHIMAN
  • Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
    Patent number: 8699537
    Abstract: The present invention provides an applications-oriented nitride compound semiconductor substrate, and devices based on it, whose lattice constant can be tuned to closely match that of any nitride thin film or films deposited on it for specific electronic or optoelectronic device applications. Such application-oriented nitride substrates, which can be composed of ternary InxGa1-xN, AlyIn1-yN, AlzGa1-zN, or quaternary AlaInbGa1-a-bN alloy compounds, minimize lattice-mismatch-induced dislocations and defects between the epitaxial films and the substrate on which the device layers are grown, leading to substantially improved device performance.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: April 15, 2014
    Inventors: Tarun Kumar Sharma, Elias Towe
  • APPLICATION-ORIENTED NITRIDE SUBSTRATES FOR EPITAXIAL GROWTH OF ELECTRONIC AND OPTOELECTRONIC DEVICE STRUCTURES
    Publication number: 20110103421
    Abstract: The present invention provides an applications-oriented nitride compound semiconductor substrate, and devices based on it, whose lattice constant can be tuned to closely match that of any nitride thin film or films deposited on it for specific electronic or optoelectronic device applications. Such application-oriented nitride substrates, which can be composed of ternary InxGa1-xN, AlyIn1-yN, AlzGa1-zN, or quaternary AlaInbGa1-a-bN alloy compounds, minimize lattice-mismatch-induced dislocations and defects between the epitaxial films and the substrate on which the device layers are grown, leading to substantially improved device performance.
    Type: Application
    Filed: October 28, 2010
    Publication date: May 5, 2011
    Inventors: TARUN KUMAR SHARMA, Elias Towe