Abstract: An imaging device including a charge-holding section having a larger saturated charge amount is provided. The imaging device includes a first electrically-conductive type semiconductor substrate, a second electrically-conductive type photoelectric conversion section, a second electrically-conductive type charge-holding section, a transfer section, and a trench section. The semiconductor substrate includes a first surface and a second surface opposite thereto. The photoelectric conversion section, embedded in the semiconductor substrate, generates charges corresponding to a light reception amount by photoelectric conversion. The charge-holding section, embedded in the semiconductor substrate, holds the charges generated in the photoelectric conversion section. The transfer section transfers charges from the photoelectric conversion section to a transfer destination. The trench section extends in a thickness direction from the first surface toward the second surface in the charge-holding section.

Abstract: An imaging device including a charge-holding section having a larger saturated charge amount is provided. The imaging device includes a first electrically-conductive type semiconductor substrate, a second electrically-conductive type photoelectric conversion section, a second electrically-conductive type charge-holding section, a transfer section, and a trench section. The semiconductor substrate includes a first surface and a second surface opposite thereto. The photoelectric conversion section, embedded in the semiconductor substrate, generates charges corresponding to a light reception amount by photoelectric conversion. The charge-holding section, embedded in the semiconductor substrate, holds the charges generated in the photoelectric conversion section. The transfer section transfers charges from the photoelectric conversion section to a transfer destination. The trench section extends in a thickness direction from the first surface toward the second surface in the charge-holding section.