Abstract: A semiconductor monolithic integrated circuit device in which leakage current is decreased. An island region of a first conductivity type formed in a semiconductor chip has at least two diffused regions of a second conductivity type opposite to the first conductivity type. An insulation film is deposited on the island region. The island region and the diffused regions are contacted with respective electrodes with low resistances through openings formed in the insulation film. An inversion stopping electrode is provided for and connected to the electrode of at least one of the diffused regions. The inversion stopping electrode is so disposed as to enclose the one diffused region against the other diffused region in cooperation with the boundary of the island region as viewed in a plane of the semiconductor chip.