Abstract: A solid-state imaging device 1 according to an embodiment of the invention includes: pixel units P(x, y) each of which includes a photoelectric conversion element and an amplifying unit for a pixel unit and which are two-dimensionally arranged; at least one row of optical black units Pob(x, y) each of which includes a photoelectric conversion element, an amplifying unit for a pixel unit, and a light shielding film that covers the photoelectric conversion element, the photoelectric conversion element and the amplifying unit for a pixel unit being the same as those of the pixel unit P(x, y); and at least one row of optical gray units Pog(x, y) each of which includes an amplifying unit for a pixel unit which is the same as that of the pixel unit and to which a reference voltage is input. The value of the reference voltage is less than the value of the output signal from the photoelectric conversion element in a saturated state.

Abstract: A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L1n. The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L2n. The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to accumulate charge generated in a photodiode in a charge accumulating section. m1 and m2 are different from each other.

Abstract: A solid-state image pickup device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, a first readout section 40, a second readout section 50, and a control section 60. Data of pixel units of rows in the light receiving section 10 selected by the first row selecting section 20 are output by the first readout section 40 to obtain image pickup data, and further, data of the pixel units of rows in the light receiving section 10 selected by the second row selecting section 30 are output by the second readout section 50 to obtain communication data.

Abstract: A blinking-signal device 1 includes a light receiving section 10, a row selecting section 20, a readout section 30, a detecting section 40, and a control section 50. By the row selecting section 20, charge generated in its photodiode of each pixel unit P2i-1,n of the (2i?1)-th row in the light receiving section 10 is accumulated in its charge accumulating section during a first period, and charge generated in its photodiode of each pixel unit P2i,n of the 2i-th row in the light receiving section 10 is accumulated in its charge accumulating section during a second period. With the detecting section 40, it is detected whether or not light reaching the pixel units P2i-1,n and P2i,n is a blinking signal on the basis of a difference between data D2i-1,n and D2i,n of the pixel units P2i-1,n and P2i output from the readout section 30.

Abstract: A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L1n. The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to output data corresponding to an amount of charge generated in a photodiode to a readout signal line L2n. The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to accumulate charge generated in a photodiode in a charge accumulating section. m1 and m2 are different from each other.

Abstract: A solid-state image pickup device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, a first readout section 40, a second readout section 50, and a control section 60. Data of pixel units of rows in the light receiving section 10 selected by the first row selecting section 20 are output by the first readout section 40 to obtain image pickup data, and further, data of the pixel units of rows in the light receiving section 10 selected by the second row selecting section 30 are output by the second readout section 50 to obtain communication data.

Abstract: A blinking-signal device 1 includes a light receiving section 10, a row selecting section 20, a readout section 30, a detecting section 40, and a control section 50. By the row selecting section 20, charge generated in its photodiode of each pixel unit P2i-1,n of the (2i?1)-th row in the light receiving section 10 is accumulated in its charge accumulating section during a first period, and charge generated in its photodiode of each pixel unit P2i,n of the 2i-th row in the light receiving section 10 is accumulated in its charge accumulating section during a second period. With the detecting section 40, it is detected whether or not light reaching the pixel units P2i-1,n and P2i,n is a blinking signal on the basis of a difference between data D2i-1,n and D2i,n of the pixel units P2i-1,n and P2i output from the readout section 30.

Abstract: A solid-state imaging device 1 according to an embodiment of the invention includes: pixel units P(x, y) each of which includes a photoelectric conversion element and an amplifying unit for a pixel unit and which are two-dimensionally arranged; at least one row of optical black units Pob(x, y) each of which includes a photoelectric conversion element, an amplifying unit for a pixel unit, and a light shielding film that covers the photoelectric conversion element, the photoelectric conversion element and the amplifying unit for a pixel unit being the same as those of the pixel unit P(x, y); and at least one row of optical gray units Pog(x, y) each of which includes an amplifying unit for a pixel unit which is the same as that of the pixel unit and to which a reference voltage is input. The value of the reference voltage is less than the value of the output signal from the photoelectric conversion element in a saturated state.