Abstract: A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molecular beams or chemical beams onto the surface of the substrate at their incident angle of not more than 40 degrees with respect to the substrate surface under a reduced atmosphere and thereby selectively and epitaxially growing a single crystalline film on the exposed surface of the substrate and then in a lateral direction parallel to the surface of the substrate on the amorphous film.

Abstract: A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molecular beams or chemical beams onto the surface of the substrate at their incident angle of not more than 40 degrees with respect to the substrate surface under a reduced atmosphere and thereby selectively and epitaxially growing a single crystalline film on the exposed surface of the substrate and then in a lateral direction parallel to the surface of the substrate on the amorphous film.

Abstract: A semiconductor substrate comprising a single crystal substrate having thereon a mask and a Group III-V compound semiconductor epitaxially grown layer, said mask comprising an insulating material thin film or high melting point metal thin film having a plurality of slit-like exposed areas running at an angle in excess of 0°, and said Group III-V compound semiconductor epitaxially grown layer being formed by growing a Group III-V compound semiconductor starting from each of said plurality of exposed areas and conjunction-integrating the grown semiconductors on said mask.

Abstract: An amorphous film 2 is formed on a single crystalline substrate 1. Then, the amorphous film is selectively removed by photolithography to form windows 3. Subsequently, the windows 3 are contacted with a supersaturated solution 5 dissolving a given element in supersaturation and thereby, single crystals containing the given element as a constituting element are epitaxially grown in a perpendicular direction to a surface of the single crystalline substrate from the windows. Then, after a given time elapsed, the epitaxial growth is stopped by finishing the contact of the windows with the supersaturated solution 5 and single crystalline members 6 having given sizes and shapes are obtained.