Abstract: An MI sensor includes: an amorphous wire; an insulator layer formed on an outer peripheral surface of the amorphous wire; and an X-axis coil, a Y-axis coil, and a Z-axis coil which are formed, in a spiral shape, on an outer peripheral surface of the insulator layer. The X-axis coil, the Y-axis coil, and the Z-axis coil are formed of a conductive layer, and the X-axis coil, the Y-axis coil, and the Z-axis coil are arranged in directions orthogonal to each other.

Abstract: A coiled electronic component includes: an electronic component body which includes a coil portion having a spiral structure and formed of an electrically conductive material, and electrically conductive connection portions arranged on both ends of the coil portion; and a pair of electrodes for respectively connecting the electrically conductive connection portions to assembly portions arranged on an assembly object. The electrode includes a pair of pinching pieces for pinching the electrically conductive connection portion, and the pair of pinching pieces is opened in a manner that the electrically conductive connection portion is received and fitted therebetween.

Abstract: A coiled electronic component includes: an electronic component body which includes a coil portion having a spiral structure and formed of an electrically conductive material, and electrically conductive connection portions arranged on both ends of the coil portion; and a pair of electrodes for respectively connecting the electrically conductive connection portions to assembly portions arranged on an assembly object. The electrode includes a pair of pinching pieces for pinching the electrically conductive connection portion, and the pair of pinching pieces is opened in a manner that the electrically conductive connection portion is received and fitted therebetween.

Abstract: A coiled electronic component includes: an electronic component body which includes a coil portion having a spiral structure and formed of an electrically conductive material, and electrically conductive connection portions arranged on both ends of the coil portion; and a pair of electrodes for respectively connecting the electrically conductive connection portions to assembly portions arranged on an assembly object. The electrode includes a pair of pinching pieces for pinching the electrically conductive connection portion, and the pair of pinching pieces is opened in a manner that the electrically conductive connection portion is received and fitted therebetween.

Abstract: A detection value correction system is a detection value correction system that corrects detection values of a plurality of sensors that are arranged in a line and detect a physical quantity, and includes a correction processing unit that corrects a detection value of a target sensor, which is a sensor to be corrected, among the sensors based on at least detection values of sensors adjacent to the target sensor.

Abstract: An MI sensor includes: an amorphous wire; an insulator layer formed on an outer peripheral surface of the amorphous wire; and an X-axis coil, a Y-axis coil, and a Z-axis coil which are formed, in a spiral shape, on an outer peripheral surface of the insulator layer. The X-axis coil, the Y-axis coil, and the Z-axis coil are formed of a conductive layer, and the X-axis coil, the Y-axis coil, and the Z-axis coil are arranged in directions orthogonal to each other.

Abstract: A length measurement device includes: a placement table; cameras imaging images of imaging ranges including target points; first marks within the imaging ranges; a reference position storage unit storing positions of the first marks on a placement surface as first mark reference positions; an image position acquisition unit acquiring, on the basis of the imaged images of the cameras, the target image positions of the target points in the imaged images and the first mark image positions of the first marks in the imaged images; a target position acquisition unit determining positions of the target points on the placement surface on the basis of the target image positions and first mark image positions in the imaged images and the first mark reference positions on the placement surface; and a length acquisition unit determining, on the basis of positions of the target points, the length of a portion to have the length thereof measured.

Abstract: A coiled electronic component includes: an electronic component body which includes a coil portion having a spiral structure and formed of an electrically conductive material, and electrically conductive connection portions arranged on both ends of the coil portion; and a pair of electrodes for respectively connecting the electrically conductive connection portions to assembly portions arranged on an assembly object. The electrode includes a pair of pinching pieces for pinching the electrically conductive connection portion, and the pair of pinching pieces is opened in a manner that the electrically conductive connection portion is received and fitted therebetween.

Abstract: A length measurement device is provided with includes: a placement table; cameras imaging images of imaging ranges including target points; first marks within the imaging ranges; a reference position storage unit storing positions of the first marks on a placement surface as first mark reference positions; an image position acquisition unit acquiring, on the basis of the imaged images of the cameras, the target image positions of the target points in the imaged images and the first mark image positions of the first marks in the imaged images; a target position acquisition unit determining positions of the target points on the placement surface on the basis of the target image positions and first mark image positions in the imaged images and the first mark reference positions on the placement surface; and a length acquisition unit determining, on the basis of positions of the target points, the length of a portion to have the length thereof measured.

Abstract: A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.

Abstract: A method for detecting a touched position on a touch panel includes: acquiring a capacitance value detected in each sensing area of the touch panel; correcting each capacitance value, based on a correlation value table that stores therein a numerical influence to be exerted on the capacitance value in each sensing area by the capacitance value in the adjacent sensing areas, and calculating a correlation correction value for each sensing area; retrieving the maximum value from among the correlation correction values; and defining the sensing area for which the correlation correction value is the maximum value, as a maximum area, calculating a centroid position as to an area including the maximum area and the sensing areas adjacent to the maximum area, based on the correlation correction values, and acquiring the calculated centroid position as a touched position.

Abstract: After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started.

Abstract: A photodiode excellent in responsivity receives flashes of light emitted from flash lamps in the process of heating a semiconductor wafer by irradiation with flashes of light, and the waveform of the intensity of the flashes of light versus time is acquired using voltage data obtained from an output from the photodiode. Then, a temperature calculating part performs a heat conduction simulation using the acquired data to calculate the temperature of the semiconductor wafer irradiated with the flashes of light from the flash lamps. The temperature of the semiconductor wafer is computed using data corresponding to the intensity of the flashes of light obtained from the output from the photodiode. This allows the determination of the surface temperature of the semiconductor wafer irradiated with the flashes of light, irrespective of the waveform of the emission intensity of the flash lamps.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.

Abstract: The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.