Abstract: Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re—W, W—Ta, Zr—Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.

Abstract: Films of a plastic resin such as a polyester film for packaging use can be imparted with improved gas barrier property or decreased permeability to gases such as water vapor and oxygen without decreasing pliability or flexibility and without degradation of the appearance and transparency so as to be useful as a packaging film for products having sensitivity to those gases. According to the invention, a plastic film is provided on at least one surface with a vapor-deposited layer of amorphous silicon of 10 to 200 nm thickness. The vapor deposition process is carried out preferably by a chemical vapor deposition method using silane and hydrogen as the reactant gases The gas permeability can be further decreased by a heat treatment of the amorphous silicon layer at 70 to 140° C.

Abstract: [Problems]Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. [Means for solution]The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re-W, W-Ta, Zr-Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.

Abstract: A polycrystalline silicon material for solar power generation is polycrystalline silicon obtained by supplying a raw material silane gas to a red-hot silicon seed rod in a sealed reactor at high temperature to thereby thermally decompose or hydrogen-reduce the raw material silane gas. The polycrystalline silicon has a p-type or n-type conductivity, a resistivity of 3 to 500 ?cm, and a lifetime of 2 to 500 ?sec and is used for manufacturing a silicon wafer for solar power generation.

Abstract: Different from conventional so-called mix-type film capacitors involving several disadvantages, in which the dielectric layers consist of a combination of a dielectric plastic resin film and an insulating paper sheet, the invention provides an all-film oil-impregnated capacitor in which the dielectric layers consist only of a plastic resin film such as a biaxially oriented polypropylene resin film (OPP film) suitable for use in microwave ovens. The all-film capacitor of the invention can be obtained and has satisfactory properties only when prepared by using specified materials including the OPP film, aluminum foil and capacitor oil and under specified conditions relative to the dielectric tangent values and dielectric capacity values before and after impregnation with a capacitor oil as well as the conditions in the step of oil impregnation.

Abstract: Different from conventional so-called mix-type film capacitors involving several disadvantages, in which the dielectric layers consist of a combination of a dielectric plastic resin film and an insulating paper sheet, the invention provides an all-film oil-impregnated capacitor in which the dielectric layers consist only of a plastic resin film such as a biaxially oriented polypropylene resin film (OPP film) suitable for use in microwave ovens. The all-film capacitor of the invention can be obtained and has satisfactory properties only when prepared by using specified materials including the OPP film, aluminum foil and capacitor oil and under specified conditions relative to the dielectric tangent values and dielectric capacity values before and after impregnation with a capacitor oil as well as the conditions in the step of oil impregnation.

Abstract: Disclosed is an efficient and inexpensive method for the purification of low-grade silicon such as metallurgical-grade metallic silicon to give solar cell-grade silicon. The method comprises: (a) melting the starting low-grade silicon in a melting crucible; (b) bringing an end of an elongated linear fiber compact body of a refractory material, e.g., bundles of carbon fibers, into contact with the molten silicon in the crucible so that the molten silicon infiltrates and migrates through the fiber compact body by the capillary phenomenon to reach the other end of the fiber compact body held at a lower level than the first end; and (c) receiving the effluent of molten silicon discharged out of the second end of the fiber compact body in a receptacle crucible. The atmospheric gas is preferably a gaseous mixture of an inert gas, e.g., argon, and a small amount of a reactive gas, e.g.

Abstract: An antibacterial substance comprising a peptide comprising a fragment constituting lepidopteran A and containing the N-terminal amino acid residue of the lepidopteran A, wherein the carboxyl group at the C-terminal of said peptide is substituted with an alkyl amide group represented by Formula (I):--CONH(CH.sub.2).sub.n CH.sub.3 (I)wherein n is an integer of 2 to 16.This antibacterial substance shows good antibacterial activities against various bacteria, and is useful as pharmaceuticals and agricultural chemicals.

Abstract: A bonding composition for silicon carbide ceramics, comprising: silicon carbide powder having a particle size of 1 to 50 .mu.m, powder carbon having a particle size of up to 15 .mu.m, silicon powder having a particle size of up to 10 .mu.m, a thermosetting resin, and a catalytically curable resin and a curing agent therefor. The composition is effective in bonding sintered silicon carbide ceramic pieces.

Abstract: Sintered bodies of silicon carbide having remarkably increased volume resistivity and thermal conductivity can be obtained by heating a green body shaped of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid at 1800.degree. to 2200.degree. C. in the presence of or in the vicinity of a shaped body of a powdery mixture of a fine silicon carbide powder admixed with boron nitride in the same furnace. The improvements in the volume resistivity and thermal conductivity of the sintered body are particularly remarkable when the fine silicon carbide powder is a pyrolysis product of a methyl hydrogen silane compound such as tetramethyl disilane.

Abstract: The invention provides a novel method for the preparation of a finely divided powder of silicon carbide as a promising material for sintered ceramic products of silicon carbide. The method comprises vapor-phase pyrolysis of a vaporizable organosilicon compound having, in a molecule, at least two, e.g. 2, 3 or 4, silicon atoms and at least one hydrogen atom directly bonded to the silicon atom but having no oxygen or halogen atom directly bonded to the silicon atom at a temperature of 750.degree. C. or higher.

Abstract: The invention provides carbon fibers coated on the surface with a layer of an amorphous silicon carbide of the composition Si.sub.x C.sub.y, x and y each being a positive number with the proviso that the ratio y/x is in the range from 0.5 to 2.5, formed by the exposure of the carbon fibers to low temperature plasma generated in an atmosphere containing an organosilicon compound having no oxygen or chlorine atom directly bonded to the silicon atom in the molecule. The carbon fibers are imparted with greatly increased resistance against air oxidation at high temperatures as well as remarkably improved affinity or wettability with plastics and molten metals along with very low reactivity with molten metals so that the carbon fibers are useful as a reinforcing material in the composite materials of carbon fiber-reinforced plastics and metals.

Abstract: The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.

Abstract: The invention provides a method for providing a highly protective coating layer of silicon carbide on to the surface of a substrate. The method comprises pyrolyzing the vapor of an organosilicon compound having at least one hydrogen atom directly bonded to the silicon atom in a molecule but having no halogen or oxygen atom directly bonded to the silicon atom at a temperature of 700.degree. to 1400.degree. C. in contact with the substrate surface to deposit silicon carbide thereon. In particular, the method is useful to form a sheath-and-core structure composed of the core of carbon filament and the coating layer of silicon carbide so that the carbon fibers are imparted with greatly improved resistance against oxidation and chemicals including molten metals when the carbon fibers are used as a reinforcing material of a fiber-reinforced metal composite as well as with improved affinity with molten resins and metals which is also an advantageous property as a reinforcing material for such matrix materials.

Abstract: The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of an amorphous silicon carbide of the formula Si.sub.x C.sub.1-x, in which x is a positive number of 0.2 to 0.9, by exposing the surface of the substrate article to an atmosphere of plasma generated in a gaseous atmosphere of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom, such as hexamethyl disilane, optionally admixed with a vapor or gas of a hydrocarbon compound, e.g. methane, benzene and the like.

Abstract: The invention provides a novel method for the preparation of silicon carbide fibers capable of being performed at a relatively low temperature and giving fibers of relatively large lengths by the vapor-phase pyrolysis of an organosilicon compound on a substrate. The method comprises contacting an organosilicon compound, which should have no halogen and oxygen atoms directly bonded to the silicon atoms and have preferably at least one hydrogen atom directly bonded to the silicon atom in a molecule, with a finely divided powder of a metal or a compound of a metal, such as copper, silver, vanadium, niobium, tantalum, iron, cobalt, nickel, palladium and platinum, at a temperature of 700.degree. to 1450.degree. C. so that the powder serves simultaneously as a catalyst and nucleus for the growth of the silicon carbide fibers thereon formed by the pyrolysis of the organosilicon compound.