Abstract: According to one embodiment, a substrate processing apparatus has a treatment tank, a holder to hold the substrate while in the treatment tank, a chemical discharge pipe below a position of the holder for supplying a chemical solution to the treatment tank, a bubble discharge pipe below the position of the holder for discharging a gas. The first bubble discharge pipe is closer along a horizontal direction to a centerline of the treatment tank than is the chemical discharge pipe. A rectifying plate is disposed below the position of the holder and extends from a position above the chemical discharge pipe to a position above the first bubble discharge pipe at an incline with respect to the first direction horizontal.

Abstract: According to one embodiment, a substrate processing apparatus includes a batch type cleaning unit, a holding unit, and a single-substrate type drying unit. The batch type cleaning unit simultaneously cleans a plurality of substrates in a batch process with a first liquid. The holding unit receives the cleaned substrates while still wet and then keeps a first surface of each of the substrates wet with the first liquid. The single-substrate type drying unit is configured to receive the substrates one by one from the holding unit and then dry off the substrates one by one.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

Abstract: According to one embodiment, a substrate processing apparatus includes a processing tank configured to store a chemical solution for processing a substrate by immersion in a chemical solution. The substrate is held by a holding member during the processing. A lid is configured to open and close an upper end portion of the processing tank. The lid has a first bubble dispensing pipe formed or integrated therein. The first bubble dispensing pipe is configured to dispense a gas into the processing tank. A bottom surface side of the lid on a processing tank side may come into direct contact with the chemical solution in some examples. The first bubble dispensing pipe may dispense an inert gas into the chemical solution to improve process stability or the like.

Abstract: A method for manufacturing a semiconductor device includes forming a hole through a first film; forming a semiconductor layer along a side surface of the hole; forming a second film overlaying a first region of the semiconductor layer; forming a third film along a side surface of a second region of the semiconductor layer that is above the first region; removing the second film to expose a side surface of the first region; forming a fourth film containing a plurality of first atoms and disposed along the side surface of the first region of the semiconductor layer; and diffusing the first atoms into the first region of the semiconductor layer.

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Abstract: According to one embodiment, a substrate processing apparatus includes a batch type cleaning unit, a holding unit, and a single-substrate type drying unit. The batch type cleaning unit simultaneously cleans a plurality of substrates in a batch process with a first liquid. The holding unit receives the cleaned substrates while still wet and then keeps a first surface of each of the substrates wet with the first liquid. The single-substrate type drying unit is configured to receive the substrates one by one from the holding unit and then dry off the substrates one by one.

Abstract: According to one embodiment, a substrate processing device includes a processing tank to store a liquid and to permit a plurality of substrates to be immersed in the liquid at the same time. The device also has a holder member configured to hold the plurality of substrates while the substrates are immersed into and withdrawn from the liquid in the processing tank as well as a straightening vane configured to be positioned in the liquid above the plurality of substrates in the processing tank. The straightening vane includes vane portions extending in a vertical direction into the processing tank that have a length in the vertical direction that is greater than a cross sectional width in a horizontal direction perpendicular to the vertical direction. A bubble discharge pipe is disposed in the processing tank below the holder member. The bubble discharge pipe discharges gas into the liquid.

Abstract: According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.

Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.