Abstract: According to one embodiment, a semiconductor manufacturing method for a stacked body that includes a semiconductor substrate, a supporting substrate containing silicon, and a joining layer arranged between the semiconductor substrate and the supporting substrate to joint the semiconductor substrate and the supporting substrate, in which a surface of the semiconductor substrate opposite to the joining layer is to be ground, includes irradiating the stacked body with electromagnetic wave having energy of 0.11 to 0.14 eV from a side of the supporting substrate, and separating the semiconductor substrate from the supporting substrate.

Abstract: According to one embodiment, a semiconductor manufacturing method for a stacked body that includes a semiconductor substrate, a supporting substrate containing silicon, and a joining layer arranged between the semiconductor substrate and the supporting substrate to joint the semiconductor substrate and the supporting substrate, in which a surface of the semiconductor substrate opposite to the joining layer is to be ground, includes irradiating the stacked body with electromagnetic wave having energy of 0.11 to 0.14 eV from a side of the supporting substrate, and separating the semiconductor substrate from the supporting substrate.

Abstract: A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

Abstract: A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

Abstract: A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

Abstract: An apparatus for manufacturing a semiconductor device, includes: a collet; an alignment stage; and a sheet feeding mechanism. The collet is configured to suck a surface of a semiconductor chip. The surface is on opposite side of a bonding surface to be bonded to a bonding target. The bonding surface is provided with a film-like adhesive layer. The collet includes a heater for heating the adhesive layer. The alignment stage is configured to support the semiconductor chip and to correct position of the semiconductor chip. The sheet feeding mechanism is configured to feed a release sheet onto the alignment stage.

Abstract: A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

Abstract: An apparatus for manufacturing a semiconductor device, includes: a collet; an alignment stage; and a sheet feeding mechanism. The collet is configured to suck a surface of a semiconductor chip. The surface is on opposite side of a bonding surface to be bonded to a bonding target. The bonding surface is provided with a film-like adhesive layer. The collet includes a heater for heating the adhesive layer. The alignment stage is configured to support the semiconductor chip and to correct position of the semiconductor chip. The sheet feeding mechanism is configured to feed a release sheet onto the alignment stage.

Abstract: A semiconductor device includes a semiconductor substrate with an electrode pad on a main surface of the semiconductor substrate; a first penetrating electrode which includes a through hole formed through the semiconductor substrate in the thickness direction so as to reach a metallic bump formed on the electrode pad, an insulating resin formed to fill the through hole in and a conductor formed in the through hole with insulated from the semiconductor substrate by the insulating resin and electrically to connect the electrode pad and the rear surface of the semiconductor wafer; a semiconductor chip mounted on the rear surface of the semiconductor wafer so that a rear surface of the semiconductor chip is faced to the rear surface of the semiconductor wafer; and a wiring to electrically connect the first penetrating electrode and an electrode formed on the semiconductor chip.

Abstract: There is here disclosed a semiconductor device comprising a first base material which is provided at least one semiconductor device mounted on one main surface, a plurality of first connection portions provided on the main surface and being electrically connected to the semiconductor device, and a plurality of second connection portions provided outside a region on which the semiconductor device is mounted on the main surface, and a second base material which is disposed facing other main surface of the first base material on a side opposite to the side on which the semiconductor device is mounted, bonded to an edge of the first base material, and provided a plurality of third connection portions provided outside a region on which the first base material is mounted on and being electrically connected to at least one of the second connection portions.

Abstract: There is here disclosed a semiconductor device comprising a first base material which is provided at least one semiconductor device mounted on one main surface, a plurality of first connection portions provided on the main surface and being electrically connected to the semiconductor device, and a plurality of second connection portions provided outside a region on which the semiconductor device is mounted on the main surface, and a second base material which is disposed facing other main surface of the first base material on a side opposite to the side on which the semiconductor device is mounted, bonded to an edge of the first base material, and provided a plurality of third connection portions provided outside a region on which the first base material is mounted on and being electrically connected to at least one of the second connection portions.