Patents by Inventor Tatsuhiro KOIZUMI

Tatsuhiro KOIZUMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode provided with UBM structure having a barrier layer for reducing solder diffusion into the electrode and a method for producing the same
    Patent number: 10347774
    Abstract: A problem addressed by an embodiment of the present invention lies in providing a UBM structure which includes thin layers and can prevent diffusion of solder into an electrode. The UBM structure according to an embodiment of the present invention includes: a first UBM layer on an electrode, a second UBM layer on the first UBM layer, and a passivated metal layer between the first UBM layer and the second UBM layer. The passivated metal layer functions as a barrier layer with respect to solder diffusion.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: July 9, 2019
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Noriyuki Kishi, Tatsuhiro Koizumi, Hiroyuki Shiraki, Mitsuru Tamashiro, Masaya Yamamoto
  • Radiation detector manufactured by dicing a semiconductor wafer and dicing method therefor
    Patent number: 9755098
    Abstract: An embodiment relates to a group II-VI semiconductor wafer of a radiation detector, and an embodiment relates to a method for producing same. An embodiment of the present invention provides a group II-VI semiconductor of a radiation detector enabling reduction or restriction of the edge effect (or the end surface effect) and a method for producing same. An embodiment of the present invention provides a radiation detector obtained by half-cutting or full-cutting a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, and cut planes according to the half-cutting or full-cutting have an angle ? (?0°) relative to the slip direction of the wafer.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: September 5, 2017
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Noriyuki Kishi, Tatsuhiro Koizumi, Hiroyuki Shiraki, Mitsuru Tamashiro, Masaya Yamamoto
  • RADIATION DETECTOR MANUFACTURED BY DICING A SEMICONDUCTOR WAFER AND DICING METHOD THEREFOR
    Publication number: 20160133776
    Abstract: An embodiment relates to a group II-VI semiconductor radiation detector, and an embodiment relates to a method for producing same. An embodiment of the present invention provides a radiation detector enabling reduction or restriction of the edge effect (or the end surface effect) and a method for producing same. An embodiment of the present invention provides a radiation detector obtained by half-cutting or full-cutting a group II-VI semiconductor wafer having a zinc blende structure in which the wafer has a {001} plane main surface, and cut planes according to the half-cutting or full-cutting have an angle ? (?°) relative to the slip direction of the wafer.
    Type: Application
    Filed: June 6, 2014
    Publication date: May 12, 2016
    Inventors: Noriyuki KISHI, Tatsuhiro KOIZUMI, Hiroyuki SHIRAKI, Mitsuru TAMASHIRO, Masaya YAMAMOTO
  • ELECTRODE PROVIDED WITH UBM STRUCTURE AND METHOD FOR PRODUCING SAME
    Publication number: 20150243801
    Abstract: A problem addressed by an embodiment of the present invention lies in providing a UBM structure which includes thin layers and can prevent diffusion of solder into an electrode. The UBM structure according to an embodiment of the present invention includes: a first UBM layer on an electrode, a second UBM layer on the first UBM layer, and a passivated metal layer between the first UBM layer and the second UBM layer. The passivated metal layer functions as a barrier layer with respect to solder diffusion.
    Type: Application
    Filed: February 25, 2015
    Publication date: August 27, 2015
    Inventors: Noriyuki KISHI, Tatsuhiro KOIZUMI, Hiroyuki SHIRAKI, Mitsuru TAMASHIRO, Masaya YAMAMOTO