Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.

Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.