Abstract: There is provided a charged particle beam apparatus which can quickly perform high accuracy positioning and defect detection. A process of acquiring a low magnification defect image for one defect candidate and a process of specifying a region appearing as a defect are performed by repeatedly performing a defect detection process maximum n-times and by using an integrated frame image of the low magnification defect image having at least one frame or the maximum n-number of frames for one defect candidate. As the low magnification defect image used in order to generate a difference image with a low magnification reference image for one defect candidate, the integrated frame image is used which is obtained by adding the frames of the low magnification defect image having at least one frame or the maximum n-number of frames.

Abstract: There is provided a charged particle beam apparatus which can quickly perform high accuracy positioning and defect detection. A process of acquiring a low magnification defect image for one defect candidate and a process of specifying a region appearing as a defect are performed by repeatedly performing a defect detection process maximum n-times and by using an integrated frame image of the low magnification defect image having at least one frame or the maximum n-number of frames for one defect candidate. As the low magnification defect image used in order to generate a difference image with a low magnification reference image for one defect candidate, the integrated frame image is used which is obtained by adding the frames of the low magnification defect image having at least one frame or the maximum n-number of frames.

Abstract: In recent years, in association with the miniaturization and high integration of semiconductor manufacturing processes, there have been arising many cases where observation target portions are densely located. In such a case, if observation is performed using a conventional pre-charge technology, scanning with an electron beam in pre-charging are repeatedly executed, therefore the charge potential on the surface of a specimen exceeds the dielectric breakdown voltage. As a result, dielectric breakdown arises in areas where scanning with an electron beam are repeatedly executed. An object of the present invention is to provide a defect observation method that can reduce the risk of dielectric breakdown, and a charged particle beam apparatus that utilizes the method. In the present invention, when a specimen is observed with the use of a technology relevant to pre-charging, after executing a piece of control processing, plural images are photographed.

Abstract: In recent years, in association with the miniaturization and high integration of semiconductor manufacturing processes, there have been arising many cases where observation target portions are densely located. In such a case, if observation is performed using a conventional pre-charge technology, scanning with an electron beam in pre-charging are repeatedly executed, therefore the charge potential on the surface of a specimen exceeds the dielectric breakdown voltage. As a result, dielectric breakdown arises in areas where scanning with an electron beam are repeatedly executed. An object of the present invention is to provide a defect observation method that can reduce the risk of dielectric breakdown, and a charged particle beam apparatus that utilizes the method. In the present invention, when a specimen is observed with the use of a technology relevant to pre-charging, after executing a piece of control processing, plural images are photographed.