Abstract: A method for manufacturing a back-illuminated solid-state imaging device includes a first step of preparing a first conduction-type semiconductor layer having a front surface and a back surface, a second step of forming a first asperity region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer, a third step of forming a second asperity region on the front surface of the semiconductor layer by smoothening asperities of the first asperity region, and a fourth step of forming an insulating layer along the second asperity region and forming a plurality of charge transfer electrodes on the insulating layer.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: An energy ray sensitive region 11 is divided in its horizontal direction into m columns with the vertical direction as the longitudinal direction, divided in its vertical direction into n rows with the horizontal direction as the longitudinal direction, and is thereby provided with m×n photoelectric conversion portions 13 that are arrayed two-dimensionally. Each of these photoelectric conversion portions 13 generates charges in response to the incidence of energy rays. On the front surface side of energy ray sensitive region 11, a plurality of transfer electrodes 15 are disposed so as to cover energy ray sensitive region 11 . The plurality of transfer electrodes 15 are respectively disposed with the horizontal direction as the longitudinal direction and are aligned in the vertical direction. The respective transfer electrodes 15 are electrically connected by voltage dividing resistors 17.

Abstract: The present invention relates to an energy ray detecting element having a structure for reducing noise effectively. The energy ray detecting element comprises an energy ray sensitive region, an output section, a plurality of electrodes, and a voltage dividing circuit. The energy ray sensitive region generates charges in response to the incidence of energy rays. On the surface of the energy ray sensitive region, each of the plurality of electrodes is arranged so as to cover a part of the energy ray sensitive region. Each electrode is electrically connected to the voltage dividing circuit that includes a plurality of voltage dividing resistors serially connected to each other. The voltage dividing circuit divides a DC output voltage from a DC power supply by using the voltage dividing resistors, and thereby providing a corresponding DC output potential to each of the electrodes.

Abstract: The present invention relates to an energy ray detecting element having a structure for reducing noise effectively. The energy ray detecting element comprises an energy ray sensitive region, an output section, a plurality of electrodes, and a voltage dividing circuit. The energy ray sensitive region generates charges in response to the incidence of energy rays. On the surface of the energy ray sensitive region, each of the plurality of electrodes is arranged so as to cover a part of the energy ray sensitive region. Each electrode is electrically connected to the voltage dividing circuit that includes a plurality of voltage dividing resistors serially connected to each other. The voltage dividing circuit divides a DC output voltage from a DC power supply by using the voltage dividing resistors, and thereby providing a corresponding DC output potential to each of the electrodes.

Abstract: An energy ray sensitive region 11 is divided in its horizontal direction into m columns with the vertical direction as the longitudinal direction, divided in its vertical direction into n rows with the horizontal direction as the longitudinal direction, and is thereby provided with m×n photoelectric conversion portions 13 that are arrayed two-dimensionally. Each of these photoelectric conversion portions 13 generates charges in response to the incidence of energy rays. On the front surface side of energy ray sensitive region 11, a plurality of transfer electrodes 15 are disposed so as to cover energy ray sensitive region 11. The plurality of transfer electrodes 15 are respectively disposed with the horizontal direction as the longitudinal direction and are aligned in the vertical direction. The respective transfer electrodes 15 are electrically connected by voltage dividing resistors 17.