Abstract: A vehicle lighting fixture can eliminate the use of a phosphor member that causes the reduced color rendering properties and the occurrence of color separation, specifically, can enhance the color rendering properties and suppress the occurrence of color separation more than a conventional white light source that use a semiconductor light emitting element such as an LD and a phosphor member (wavelength converting member). The vehicle lighting fixture includes: a supercontinuum light source configured to output supercontinuum light containing light in a visible wavelength region, and an optical system configured to control the supercontinuum light output from the supercontinuum light source.

Abstract: A vehicular lighting device from which a fluorescent material is omitted that may cause deterioration of color rendering properties and occurrence of color separation is provided. The vehicular lighting device can have higher in color rendering properties than a conventional white light source obtained by combining a semiconductor light-emitting element such as an LD and the fluorescent material (wavelength converting member) and can suppress occurrence of color separation. A vehicular lighting device of the presently disclosed subject matter includes a supercontinuum light source that outputs supercontinuum light containing a visible wavelength region, and an optical system that controls the supercontinuum light output by the supercontinuum light source.

Abstract: A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.

Abstract: The disclosed subject matter relates to a reliable laser light-emitting apparatus. The laser light-emitting apparatus can include a laser chip, which is sealed by a first base board having an opening, a second base board and a wavelength converting board. The wavelength converting board can be attached between the first base board and the second base board so as to be located between the opening and the laser chip. A laser beam emitted from the laser chip can be emitted from the opening via the wavelength converting board, and heats generated from the laser chip and the wavelength converting board can efficiently radiate from the first base board and the first base board. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting apparatuses, which can emit various color lights having favorable optical characteristics and which can be used for lighting units such as a headlight under the tough environments.

Abstract: A semiconductor light emitting device including a plurality of light emitting elements can be miniaturized while enabling to emit light with high luminance. The semiconductor light emitting device can include a mounting substrate, and a plurality of semiconductor light emitting elements mounted on the mounting substrate side by side, each of the semiconductor light emitting elements having a semiconductor structure layer that can include a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, which are layered in that order. Each of the semiconductor light emitting elements can have a resonator constituted by end surfaces of the semiconductor structure layer opposite to each other, and also has a recessed portion recessed from the surface of the second semiconductor layer toward the active layer.

Abstract: A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements.

Abstract: The semiconductor optical device has a chip of semiconductor lamination having a first semiconductor layer of a first conductivity type having a first surface, a second semiconductor layer of a second conductivity type opposite to the first conductivity type having a second surface, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the chip having side surface including a first side surface which is contiguous to the second surface, forms an obtuse angle with the second surface, extends across the second semiconductor layer and the active layer, and enters the first semiconductor layer, and a cracked surface which is contiguous to the first side surface, a first conductivity type side electrode formed on the first surface, and a second conductivity type side electrode formed on the second surface, wherein in-plane size of the semiconductor lamination is 50 ?m or less.

Abstract: The disclosed subject matter relates to a reliable laser light-emitting apparatus. The laser light-emitting apparatus can include a laser chip, which is sealed by a first base board having an opening, a second base board and a wavelength converting board. The wavelength converting board can be attached between the first base board and the second base board so as to be located between the opening and the laser chip. A laser beam emitted from the laser chip can be emitted from the opening via the wavelength converting board, and heats generated from the laser chip and the wavelength converting board can efficiently radiate from the first base board and the first base board. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting apparatuses, which can emit various color lights having favorable optical characteristics and which can be used for lighting units such as a headlight under the tough environments.

Abstract: A vehicle lighting fixture can eliminate the use of a phosphor member that causes the reduced color rendering properties and the occurrence of color separation, specifically, can enhance the color rendering properties and suppress the occurrence of color separation more than a conventional white light source that use a semiconductor light emitting element such as an LD and a phosphor member (wavelength converting member). The vehicle lighting fixture includes: a supercontinuum light source configured to output supercontinuum light containing light in a visible wavelength region, and an optical system configured to control the supercontinuum light output from the supercontinuum light source.

Abstract: A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.

Abstract: A semiconductor light emitting device including a plurality of light emitting elements can be miniaturized while enabling to emit light with high luminance. The semiconductor light emitting device can include a mounting substrate, and a plurality of semiconductor light emitting elements mounted on the mounting substrate side by side, each of the semiconductor light emitting elements having a semiconductor structure layer that can include a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, which are layered in that order. Each of the semiconductor light emitting elements can have a resonator constituted by end surfaces of the semiconductor structure layer opposite to each other, and also has a recessed portion recessed from the surface of the second semiconductor layer toward the active layer.

Abstract: A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion.

Abstract: Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.

Abstract: A semiconductor light-emitting device includes a semiconductor laminate containing an n-type layer, a light-emitting layer, and a p-type layer, via holes penetrating the p-type and the light-emitting layers exposing the n-type layer, a p-side electrode extending on the p-type layer and having light reflectivity, which is separated from each of the boundary edges of the p-type layer and the plurality of via holes, an insulating layer which covers via hole side surfaces and extends on the p-type layer, and which extends on the boundary edge portion of the p-side electrode, and n-side electrodes which are electrically connected to the n-type layer at the bottoms of the via holes, which are led above the p-type layer and the p-side electrode with the insulating layer intervening therebetween, which overlap the p-side electrode without gaps, in a plan view, and which have light reflectivity.

Abstract: Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.

Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Abstract: A semiconductor light-emitting device comprises: a mounting substrate; a plurality of semiconductor light-emitting elements that are arranged on the mounting substrate; a light absorber that is formed so as to cover an entire region between the plurality of semiconductor light-emitting elements adjacent to each other on the mounting substrate; and a wiring group including a plurality of wirings wired to each of the plurality of semiconductor light-emitting elements.

Abstract: A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements.

Abstract: The semiconductor optical device has a chip of semiconductor lamination having a first semiconductor layer of a first conductivity type having a first surface, a second semiconductor layer of a second conductivity type opposite to the first conductivity type having a second surface, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the chip having side surface including a first side surface which is contiguous to the second surface, forms an obtuse angle with the second surface, extends across the second semiconductor layer and the active layer, and enters the first semiconductor layer, and a cracked surface which is contiguous to the first side surface, a first conductivity type side electrode formed on the first surface, and a second conductivity type side electrode formed on the second surface, wherein in-plane size of the semiconductor lamination is 50 ?m or less.

Abstract: A semiconductor light-emitting device comprises: a mounting substrate; a plurality of semiconductor light-emitting elements that are arranged on the mounting substrate; a light absorber that is formed so as to cover an entire region between the plurality of semiconductor light-emitting elements adjacent to each other on the mounting substrate; and a wiring group including a plurality of wirings wired to each of the plurality of semiconductor light-emitting elements.