Abstract: An object is to provide a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic apparatus that are capable of reducing tensile stress produced between a covering film and a semiconductor element which is joined to a solid-state imaging element and which is covered with the covering film, and that allow transistors to be provided near chip ends. There is provided a configuration including a solid-state imaging element, a semiconductor element laminated on the solid-state imaging element and electrically connected to the solid-state imaging element, and a covering film that covers a non-lamination portion that is a region where the semiconductor element is not laminated, in a laminated surface of the solid-state imaging element where the semiconductor element is laminated, and further covers a peripheral side surface of the semiconductor element and forms a clearance between the peripheral side surface of the semiconductor element and the covering film.

Abstract: To provide a solid-state imaging device capable of further improving quality and reliability of the solid-state imaging device. Provided is a solid-state imaging device including: a first substrate; a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate; a third substrate provided on a side opposite to a light incident side of the second substrate; and an insulating layer formed between the first substrate and the third substrate, in which the third substrate includes a well formed on a light incident side of the third substrate.