Patents by Inventor Tatsumfi Kurokawa

Tatsumfi Kurokawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protection circuit
    Patent number: 8704578
    Abstract: A P-channel MOS transistor MP1 is provided between an input voltage Vin and the low-voltage circuit. The cathode of a first zener diode Z1 is connected to a node between the input voltage Vin and the source of the P-channel MOS transistor MP1. The anode of the first zener diode Z1 is branched into two lines at a branch node N1, and one of the two lines is connected to a ground through a resistor R1. The other of the two lines is connected to the gate of the P-channel MOS transistor MP1. The cathode of a second zener diode Z2 is connected to a node between the low-voltage circuit and the drain of the P-channel MOS transistor MP1. The anode of the second zener diode Z2 is connected to a ground.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: April 22, 2014
    Assignee: Rensas Electronics Corporation
    Inventor: Tatsumfi Kurokawa