Patents by Inventor Tatsumi Shoji

Tatsumi Shoji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7855374
    Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: December 21, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuro Saito, Tatsumi Shoji, Yoichi Fukumiya
  • Publication number: 20090071818
    Abstract: An ion beam sputtering film deposition apparatus is provided which can form a high-quality thin film that is dense, smooth and faultless. The film deposition apparatus has ion beam irradiating unit, a target 105 containing a film forming substance to be sputtered, and holding unit 112 to hold a substrate 106 on which the sputtered film forming substance is deposited. The ion beam irradiating unit irradiates gas cluster ions to both the target 105 and the substrate 106.
    Type: Application
    Filed: March 15, 2007
    Publication date: March 19, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoichi Fukumiya, Tatsumi Shoji, Tetsuro Saito, Koji Kitani, Satoshi Nakamura, Koh Kamachi
  • Publication number: 20080179537
    Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.
    Type: Application
    Filed: March 7, 2008
    Publication date: July 31, 2008
    Applicant: Canon Kabushiki Kaisha
    Inventors: Tetsuro Saito, Tatsumi Shoji, Yoichi Fukumiya
  • Patent number: 7365341
    Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: April 29, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuro Saito, Tatsumi Shoji, Yoichi Fukumiya
  • Patent number: 7156499
    Abstract: A heat generating resistive element which is used in a liquid discharge head for discharging a liquid from a discharge port by thermal energy, comprises a composition ratio of 15–30 at% Fe, 35–60 at% Si, and 10–50 at% N, in total to 100 at% or substantially 100 at%.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: January 2, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Suzuki, Tatsumi Shoji
  • Patent number: 7140721
    Abstract: A heat generating resistive element which is used in a liquid discharge head for discharging a liquid from a discharge port by thermal energy, consisting of a composition ratio of 15–30 at % Fe, 35–60 at % Si, 10–50 at % N and 1–10 at % O, in total to 100 at % or substantially 100 at %.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: November 28, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Suzuki, Tatsumi Shoji
  • Publication number: 20060124934
    Abstract: A thin film transistor produced through flattening a gate insulating film acquires the high mobility of a carrier, but has a problem of occasionally showing low resistivity, low withstanding voltage, and consequent low reliability. The present invention solves the above described problem and provides a thin film transistor having the high mobility, the high resistivity, the high withstanding voltage and the high reliability. The present invention also provides a method for producing a thin film transistor having a semiconductor film formed on a gate insulating film thereon, which has the steps of: forming the gate insulating film; and flattening a surface of the gate insulating film by irradiating the surface of the gate insulating film with a gas cluster ion beam.
    Type: Application
    Filed: December 14, 2005
    Publication date: June 15, 2006
    Applicant: Canon Kabushiki Kaisha
    Inventors: Yoichi Fukumiya, Tetsuro Saito, Tatsumi Shoji
  • Publication number: 20060118731
    Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.
    Type: Application
    Filed: December 1, 2005
    Publication date: June 8, 2006
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tetsuro Saito, Tatsumi Shoji, Yoichi Fukumiya
  • Patent number: 7022181
    Abstract: In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: April 4, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Masaki Mizutani
  • Patent number: 6953506
    Abstract: A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.
    Type: Grant
    Filed: October 18, 2001
    Date of Patent: October 11, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Iwane, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
  • Patent number: 6951584
    Abstract: An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
    Type: Grant
    Filed: February 12, 2003
    Date of Patent: October 4, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noritaka Ukiyo, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Masaaki Iwane, Masaki Mizutani
  • Publication number: 20050162478
    Abstract: A heat generating resistive element which is used in a liquid discharge head for discharging a liquid from a discharge port by thermal energy, comprises a composition ratio of 15-30 at % Fe, 35-60 at % Si, and 10-50 at % N, in total to 100 at % or substantially 100 at %.
    Type: Application
    Filed: December 2, 2004
    Publication date: July 28, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Suzuki, Tatsumi Shoji
  • Publication number: 20050122379
    Abstract: A heat generating resistive element which is used in a liquid discharge head for discharging a liquid from a discharge port by thermal energy, consisting of a composition ratio of 15-30 at % Fe, 35-60 at % Si, 10-50 at % N and 1-10 at % O, in total to 100 at % or substantially 100 at %.
    Type: Application
    Filed: December 2, 2004
    Publication date: June 9, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Suzuki, Tatsumi Shoji
  • Patent number: 6872248
    Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: March 29, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Mizutani, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida
  • Patent number: 6824609
    Abstract: A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: November 30, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuro Saito, Katsumi Nakagawa, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Masaki Mizutani
  • Patent number: 6802900
    Abstract: Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Iwane, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
  • Patent number: 6802926
    Abstract: A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Mizutani, Isao Tanikawa, Katsumi Nakagawa, Tatsumi Shoji, Noritaka Ukiyo, Yukiko Iwasaki
  • Publication number: 20040087111
    Abstract: A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating the semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.
    Type: Application
    Filed: September 10, 2003
    Publication date: May 6, 2004
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yukiko Iwasaki, Tatsumi Shoji, Shoji Nishida
  • Patent number: 6720237
    Abstract: A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.
    Type: Grant
    Filed: February 27, 2002
    Date of Patent: April 13, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yukiko Iwasaki, Tatsumi Shoji, Shoji Nishida
  • Publication number: 20030230231
    Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
    Type: Application
    Filed: March 28, 2003
    Publication date: December 18, 2003
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Masaki Mizutani, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida