Abstract: According to one embodiment, a semiconductor device includes: a wiring layer including a first metallic film provided on an oxide film, a second metallic film provided on the first metallic film, and a polysilicon film provided on the second metallic film; and an element layer provided on the wiring layer and including semiconductor elements electrically connected to the first metallic film. Standard Gibbs energy of formation of a first metal included in the first metallic film is lower than that of a second metal included in the second metallic film.

Abstract: According to one embodiment, a semiconductor device includes: a wiring layer including a first metallic film provided on an oxide film, a second metallic film provided on the first metallic film, and a polysilicon film provided on the second metallic film; and an element layer provided on the wiring layer and including semiconductor elements electrically connected to the first metallic film. Standard Gibbs energy of formation of a first metal included in the first metallic film is lower than that of a second metal included in the second metallic film.

Abstract: A semiconductor manufacturing apparatus includes a vacuum chamber, a rotary member, a first magnet, a second magnet, and a magnetic body. The vacuum chamber contains a substrate and a target located opposite to the substrate. The rotary member has a first surface located on a back side of the target outside the vacuum chamber. The first magnet is provided on the first surface. The second magnet has a magnetic pole opposite to a magnetic pole of the first magnet and is provided on an inner side of the first magnet on the first surface. The magnetic body is provided between the first magnet and the second magnet and is configured to be movable backward and forward in a vertical direction.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a first cooler, a second cooler, and a temperature controller. The first cooler includes a first placing portion that can place a central portion of a semiconductor substrate thereon, and cools the central portion by heat exchange with the first placing portion. The second cooler includes a second placing portion that can place a peripheral portion of the semiconductor substrate thereon in a periphery of the first placing portion, and cools the peripheral portion. The temperature controller controls a temperature of the second placing portion to be lower than a temperature of the semiconductor substrate and to be higher than a temperature of the first placing portion.

Abstract: A semiconductor manufacturing apparatus includes a vacuum chamber, a rotary member, a first magnet, a second magnet, and a magnetic body. The vacuum chamber contains a substrate and a target located opposite to the substrate. The rotary member has a first surface located on a back side of the target outside the vacuum chamber. The first magnet is provided on the first surface. The second magnet has a magnetic pole opposite to a magnetic pole of the first magnet and is provided on an inner side of the first magnet on the first surface. The magnetic body is provided between the first magnet and the second magnet and is configured to be movable backward and forward in a vertical direction.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a first cooler, a second cooler, and a temperature controller. The first cooler includes a first placing portion that can place a central portion of a semiconductor substrate thereon, and cools the central portion by heat exchange with the first placing portion. The second cooler includes a second placing portion that can place a peripheral portion of the semiconductor substrate thereon in a periphery of the first placing portion, and cools the peripheral portion. The temperature controller controls a temperature of the second placing portion to be lower than a temperature of the semiconductor substrate and to be higher than a temperature of the first placing portion.

Abstract: A manufacturing method of a solar cell including a transparent conductive film formed on a transparent substrate includes the steps of: preparing a target, the target including ZnO and a material including a substance including an Al or a Ga, the ZnO being a primary component of the target; in a first atmosphere including a process gas, applying a sputter electric voltage to the target and forming a first layer included in the transparent conductive film; in a second atmosphere including a greater amount of an oxygen gas compared to the first atmosphere, applying a sputter electric voltage to the target and forming a second layer on the first layer, the second layer being included in the transparent conductive film; and forming an irregular shape by performing an etching process on the transparent conductive film.