Patents by Inventor Tatsumi Yamanaka
Tatsumi Yamanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10908302Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.Type: GrantFiled: July 25, 2016Date of Patent: February 2, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Tatsumi Yamanaka
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Patent number: 10461115Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.Type: GrantFiled: November 26, 2013Date of Patent: October 29, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Tatsumi Yamanaka, Akira Sakamoto, Noburo Hosokawa
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Patent number: 10418496Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.Type: GrantFiled: November 26, 2013Date of Patent: September 17, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Tatsumi Yamanaka, Akira Sakamoto, Noburo Hosokawa
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Publication number: 20160334518Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.Type: ApplicationFiled: July 25, 2016Publication date: November 17, 2016Inventor: Tatsumi Yamanaka
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Patent number: 9431567Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.Type: GrantFiled: October 17, 2013Date of Patent: August 30, 2016Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Tatsumi Yamanaka
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Publication number: 20150340402Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.Type: ApplicationFiled: November 26, 2013Publication date: November 26, 2015Inventors: Tatsumi YAMANAKA, Akira SAKAMOTO, Noburo HOSOKAWA
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Publication number: 20150311358Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.Type: ApplicationFiled: November 26, 2013Publication date: October 29, 2015Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Tatsumi YAMANAKA, Akira SAKAMOTO, Noburo HOSOKAWA
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Patent number: 9099599Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.Type: GrantFiled: October 17, 2013Date of Patent: August 4, 2015Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Tatsumi Yamanaka
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Publication number: 20140084173Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.Type: ApplicationFiled: October 17, 2013Publication date: March 27, 2014Applicant: Hamamatsu Photonics K.K.Inventor: Tatsumi YAMANAKA
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Publication number: 20140084172Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.Type: ApplicationFiled: October 17, 2013Publication date: March 27, 2014Applicant: Hamamatsu Photonics K.K.Inventor: Tatsumi YAMANAKA
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Patent number: 8592934Abstract: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11.Type: GrantFiled: December 7, 2006Date of Patent: November 26, 2013Assignee: Hamamatsu Photonics K.K.Inventor: Tatsumi Yamanaka
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Patent number: 8084836Abstract: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.Type: GrantFiled: December 27, 2006Date of Patent: December 27, 2011Assignee: Hamamatsu Photonics K.K.Inventors: Tatsumi Yamanaka, Masanori Sahara, Hideki Fujiwara
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Publication number: 20080149943Abstract: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.Type: ApplicationFiled: December 27, 2006Publication date: June 26, 2008Inventors: Tatsumi Yamanaka, Masanori Sahara, Hideki Fujiwara
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Patent number: 7336808Abstract: Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.Type: GrantFiled: February 12, 2003Date of Patent: February 26, 2008Assignee: Hamamatsu Photonics K.K.Inventors: Seiichiro Mizuno, Tatsumi Yamanaka, Yoshimaro Fujii
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Publication number: 20070075344Abstract: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11.Type: ApplicationFiled: December 7, 2006Publication date: April 5, 2007Inventor: Tatsumi Yamanaka
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Patent number: 7170143Abstract: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11.Type: GrantFiled: April 22, 2004Date of Patent: January 30, 2007Assignee: Hamamatsu Photonics K.K.Inventor: Tatsumi Yamanaka
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Publication number: 20060165294Abstract: Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.Type: ApplicationFiled: February 12, 2003Publication date: July 27, 2006Inventors: Seiichiro Mizuno, Tatsumi Yamanaka, Yoshimoto Fuji
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Publication number: 20050082630Abstract: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11.Type: ApplicationFiled: April 22, 2004Publication date: April 21, 2005Inventor: Tatsumi Yamanaka