Abstract: A method of manufacturing a partially-glazed ceramic substrate for use in a thermal printing head. A ceramic substrate having a surface roughness of 0.2 .mu.m or less is provided. Subsequently, a glaze is applied to the ceramic substrate to form raised glaze regions having a transverse width of 1.0 mm or less and thickness of 100 .mu.m or less. The substrate and glaze are baked, and then a heating element is formed on the raised glaze regions.

Abstract: Glaze compositions for ceramic substrates such as an alumina substrate are described. In a first embodiment, the glaze composition consists of 55 to 75 mol % SiO.sub.2, 1 to 15 mol % Al.sub.2 O.sub.3, 3 to 20 mol % CaO, 1 to 13 mol % BaO and 0.1 to 5 mol % Y.sub.2 O.sub.3. In a second embodiment, the glaze composition consists essentially of 55 to 75 mol % SiO.sub.2, 1 to 15 mol % Al.sub.2 O.sub.3, 3 to 20 mol % CaO, 1 to 13 mol % BaO, 1 to 5 mol % Y.sub.2 O.sub.3, 25 mol % or less SrO, 7 mol % or less B.sub.2 O.sub.3, 2 mol % or less ZnO and 2 mol % or less MgO. In a third embodiment, the glaze composition consists essentially of 58 to 75 mol % SiO.sub.2, 2 to 15 mol % Al.sub.2 O.sub.3, 0.5 to 5 mol % La.sub.2 O.sub.3, 2 to 20 mol % CaO and 1 to 13 mol % BaO. In a fourth embodiment, the glaze composition consists essentially of 58 to 75 mol % SiO.sub.2, 2 to 15 mol % Al.sub.2 O.sub.3, 0.5 to 5 mol % La.sub.2 O.sub.

Abstract: A device containing a semiconductor element having a substrate a cap over the substrate with a glass layer formed between the cap and the substrate providing a seal therebetween. Electrically conducting terminal members extend through the glass layer and connect with means for electrically connecting to the semiconductor element. A semiconductor mounting member is joined to the substrate and a semiconductor element having a coefficient of thermal expansion approximately equal to the semiconductor element mounted thereon.

Abstract: Glaze compositions for ceramic substrates such as an alumina substrate are described. In a first embodiment, the glaze composition consists of 55 to 75 mol % SiO.sub.2, 1 to 15 mol % Al.sub.2 O.sub.3, 3 to 20 mol % CaO, 1 to 13 mol % BaO and 0.1 to 5 mol % Y.sub.2 O.sub.3. In a second embodiment, the glaze composition consists essentially of 55 to 75 mol % SiO.sub.2, 1 to 15 mol % Al.sub.2 O.sub.3, 3 to 20 mol % CaO, 1 to 13 mol % BaO, 1 to 5 mol % Y.sub.2 O.sub.3, 25 mol % or less SrO, 7 mol % or less B.sub.2 O.sub.3, 2 mol % or less ZnO and 2 mol % or less MgO. In a third embodiment, the glaze composition consists essentially of 58 to 75 mol % SiO.sub.2, 2 to 15 mol % Al.sub.2 O.sub.3, 0.5 to 5 mol % La.sub.2 O.sub.3, 2 to 20 mol % CaO and 1 to 13 mol % BaO. In a fourth embodiment, the glaze composition consists essentially of 58 to 75 mol % SiO.sub.2, 2 to 15 mol % Al.sub.2 O.sub.3, 0.5 to 5 mol % La.sub.2 O.sub.