Patents by Inventor Tatsuo Aoki

Tatsuo Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor circuit device and method for production thereof
    Patent number: 5406098
    Abstract: A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.
    Type: Grant
    Filed: August 3, 1994
    Date of Patent: April 11, 1995
    Assignee: Nippon Telegraph & Telephone Corporation
    Inventors: Fumiaki Hyuga, Kenji Shiojima, Tatsuo Aoki, Kazuyoshi Asai, Masami Tokumitsu, Kazumi Nishimura, Yasuro Yamane
  • Semiconductor circuit device and method for production thereof
    Patent number: 5369043
    Abstract: A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.
    Type: Grant
    Filed: December 22, 1993
    Date of Patent: November 29, 1994
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Fumiaki Hyuga, Kenji Shiojima, Tatsuo Aoki, Kazuyoshi Asai, Masami Tokumitsu, Kazumi Nishimura, Yasuro Yamane