Abstract: A plasma processing apparatus comprises a vacuum vessel, an anode and a cathode arranged in the vacuum vessel, and a discharge producing power source for intermittently producing main discharge between the anode and the cathode to process a substrate arranged in the proximity of the anode and the cathode. The discharge producing power source comprises a magnetic field setting device including magnetic coils arranged closely to the vacuum vessel and having pole pieces and alternate current power sources for the magnetic coils. The plasma processing apparatus is able to remarkably increase processing speeds and considerably reduce the temperature rise and damage therefrom of substrates to be processed. Moreover, the magnetic field setting device is arranged in a small size to make the plasma processing apparatus compact and small-sized.

Abstract: For processing an object by the use of gas plasma generated in a predetermined gas, such as nitrogen, in cooperation of an electromagnetic wave with a static, an alternating, and a rotating magnetic field, an apparatus comprises a magnet around a first part of a reaction vessel to produce the magnetic field substantially parallel to an interface at which the first part is contiguous with a second part of the reaction vessel so as to confine the gas plasma within the first part. The interface may be open ultraviolet rays and charged or neutral particles produced by the gas plasma. Alternatively, an optical window may be disposed at the interface to use only the ultraviolet rays with the object held within the second part.

Abstract: An ion beam generating apparatus is used together with a vacuum chamber. The ion beam generating apparatus has an anode assembly arranged inside the vacuum chamber, a gas supply mechanism for supplying a gas into the vicinity of the anode assembly, a temperature control mechanism for controlling a temperature of an apex of the anode assembly, and a cooling mechanism for cooling at least part of the anode assembly.