Abstract: A neutron ray generating apparatus includes: an accelerator that emits a particle beam; a target disposition portion that disposes a target that is irradiated with the particle beam to generate a neutron ray; and a transport path that transports the particle beam between the accelerator and the target disposition portion. The target disposition portion and the accelerator are disposed on a reference line of the transport path. A first shield member that shields radiation and a second shield member that shields the radiation and that is disposed to be spaced apart from the first shield member toward an accelerator side are provided between the target disposition portion and the accelerator.

Abstract: A neutron capture therapy apparatus includes a neutron ray irradiation unit that irradiates an irradiation target with a neutron ray, a drug injection unit that injects a drug to the irradiation target, and a posture change unit that changes a posture of the irradiation target. The neutron ray irradiation unit performs first irradiation for irradiating the irradiation target with the neutron ray in a first incident direction, and performs second irradiation for irradiating the irradiation target with the neutron ray in a second incident direction different from the first incident direction, and the posture change unit is capable of changing the posture of the irradiation target between a time of the first irradiation and a time of the second irradiation.

Abstract: A base 1 for a honeycomb filter of the present invention includes: a ceramic porous body having a large number of fine pores, and a plurality of cells 3 separated from each other by partition walls 4 and to serve as fluid passages. 50% pore diameter (d50) of the ceramic porous body is within the range from 8.5 to 13 ?m, and the partition walls 4 separating the plurality of cells have an average surface roughness of 3.0 to 5.5 ?m.

Abstract: A read-only memory has memory cells each with a vertical metal oxide semiconductor field effect transistor and a bit line. The vertical metal oxide semiconductor field effect transistor has a gate electrode serving as a word line, a source, a drain, and a vertical channel region between the source and drain constituted by first and second diffusion layers. The gate electrode is formed on a side wall of a trench, which has a pair of side walls substantially perpendicular to a major surface of a semiconductor substrate of a first conductivity type and an interconnecting bottom surface substantially perpendicular to the side wall surfaces. The first and second diffusion layers of a second conductivity type are formed in an upper portion of the semiconductor substrate and in a bottom of the trench, respectively. The bit lines are formed in a predetermined pattern.

Abstract: A servo circuit for a signal reproducing apparatus for reproducing signals from a record medium such as a disc utilizing an optical pickup, wherein a variable gain amplifier is arranged in a servo loop between a pickup and an actuator so that the pickup is caused to track a signal track in accordance with a servo error signal produced by the variable gain amplifier. A playback condition of a disc is discriminated by detecting the number of errors in a signal reproduced from a recorded signal on the disc by the pickup, and a gain of the variable gain amplifier is controlled by the discrimination output so that the variation of the servo error signal caused by a difference in reflectance between individual discs is eliminated and a loop gain appropriate to an individual disc is automatically set.

Abstract: The output signal of an l-f (low-frequency) power amplifier is supplied to an electroacoustic transducer, through an inductive element for preventing parasitic oscillation, to cause the inductive element to generate a magnetic flux whose density depends on the output current signal of the power amplifier while a current according to the magnitude of the output voltage signal of the power amplifier is supplied to the current input terminals of a Hall-effect element disposed in the magnetic field induced by the inductive element, so that a voltage according to the output power of the l-f power amplifier is taken out of the output terminals of the Hall-effect element. When the voltage exceeds a predetermined level, the l-f signal supplied to the electroacoustic transducer is attenuated by a signal attenuating circuit so that the transducer is prevented from being damaged.

Abstract: A low frequency power amplifier uses MOS FET's each having a semiconductor device unit including a source electrode, a drain electrode and an insulated gate electrode filled in a can type casing with the source electrode being electrically connected to the can type casing. When the MOS FET having its source electrode connected to the can type casing is mounted on a heat sink and operated in a source follower configuration, a stray capacity between the can-shaped casing and the heat sink is connected in parallel with a load so that the amplifier oscillates. The heat sink is grounded through an impedance element and the stray capacity is isolated from the load to prevent the oscillation.

Abstract: An audio frequency power amplifier wherein an input signal is applied to respective input electrodes of a pair of transistors of the same conductivity type to produce an output signal at an output electrode of one of the pair of transistors. A common electrode of the one transistor is connected with an output electrode of the other transistor and a power from a first D.C. power supply is supplied to the junction thereof through a diode while a power is supplied to a common electrode of the other transistor from a second D.C. power supply having a higher voltage than that of the first D.C. power supply. The other transistor and the diode are alternately rendered conductive and non-conductive in response to the signal level of the input signal, a capacitor is connected to the input electrode of the other transistor, which capacitor is charged during the turn-off of the other transistor whereby the charge is supplied to the other transistor upon turning on of the other transistor to shorten the rise time.