Patents by Inventor Tatsuo Dougakiuchi

Tatsuo Dougakiuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10591413
    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: March 17, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Kazuue Fujita, Tadataka Edamura
  • Patent number: 10574030
    Abstract: An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: February 25, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka Edamura, Atsushi Sugiyama, Tatsuo Dougakiuchi
  • Publication number: 20190326466
    Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
    Type: Application
    Filed: April 17, 2019
    Publication date: October 24, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Masahiro HITAKA, Akio ITO, Tatsuo DOUGAKIUCHI, Kazuue FUJITA, Tadataka EDAMURA
  • Patent number: 10439363
    Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: October 8, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio Ito, Kazuue Fujita, Daisuke Kawaguchi, Tatsuo Dougakiuchi, Tadataka Edamura
  • Publication number: 20190265396
    Abstract: A movable diffraction grating includes; a supporting portion; a movable portion which includes a first surface and is swingably connected with the supporting portion; a resin layer which is provided on the first surface and includes a diffraction grating pattern formed therein; a reflection layer which is provided on the resin layer an along the diffraction grating pattern and is formed of metal; and a stress regulation portion inducing stress on the movable portion, and the first surface is caused to bend concavely by stress.
    Type: Application
    Filed: February 26, 2019
    Publication date: August 29, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka EDAMURA, Atsushi SUGIYAMA, Tatsuo DOUGAKIUCHI
  • Publication number: 20190074664
    Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
    Type: Application
    Filed: September 5, 2018
    Publication date: March 7, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio ITO, Kazuue FUJITA, Daisuke KAWAGUCHI, Tatsuo DOUGAKIUCHI, Tadataka EDAMURA
  • Publication number: 20190052058
    Abstract: An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).
    Type: Application
    Filed: August 1, 2018
    Publication date: February 14, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka EDAMURA, Atsushi SUGIYAMA, Tatsuo DOUGAKIUCHI
  • Publication number: 20190011361
    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 10, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo DOUGAKIUCHI, Akio ITO, Kazuue FUJITA, Tadataka EDAMURA
  • Publication number: 20180236257
    Abstract: A cell stimulation method includes continuously emitting mid-infrared light to a living cell and thus changing an ion concentration of the cell or changing ion concentrations of the cell and other cells disposed around the cell.
    Type: Application
    Filed: February 14, 2018
    Publication date: August 23, 2018
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Gen TAKEBE, Yoshiyuki SHIMIZU, Toyohiko YAMAUCHI, Tatsuo DOUGAKIUCHI
  • Patent number: 10014662
    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a cascade structure in the form of a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2 by intersubband emission transitions of electrons, and to generate output light of a difference frequency ? by difference frequency generation from the first pump light and the second pump light. Grooves respectively formed in a direction intersecting with a resonating direction in a laser cavity structure are provided on a second surface opposite to the first surface of the substrate.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: July 3, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuue Fujita, Akio Ito, Tadataka Edamura, Tatsuo Dougakiuchi
  • Patent number: 10008829
    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2, and to generate output light of a difference frequency ? by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ?1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: June 26, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Kazuue Fujita, Akio Ito, Tadataka Edamura
  • Patent number: 9929292
    Abstract: A quantum cascade detector includes a semiconductor substrate; an active layer having a cascade structure; a lower cladding layer provided between the active layer and the substrate and having a lower refractive index than the active layer; a lower metal layer provided between the lower cladding layer and the substrate; an upper cladding layer provided on an opposite side to the substrate with respect to the active layer and having a lower refractive index than the active layer; and an upper metal layer provided on an opposite side to the active layer with respect to the upper cladding layer. A first end face being in a waveguide direction in a waveguide structure with the active layer, lower cladding layer, and upper cladding layer is an entrance surface for light to be detected.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: March 27, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Tadataka Edamura, Kazuue Fujita
  • Patent number: 9912119
    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer having a multistage lamination of emission layers and injection layers. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2, and to generate output light of a difference frequency ? by difference frequency generation. An external diffraction grating is provided for generating the first pump light, outside an element structure portion including the active layer, and an internal diffraction grating is provided for generating the second pump light, inside the element structure portion. The frequency ?2 is set to be fixed to a frequency not coincident with a gain peak, and the frequency ?1 is set to be variable to a frequency different from the frequency ?2.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: March 6, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio Ito, Tatsuo Dougakiuchi, Kazuue Fujita, Tadataka Edamura
  • Patent number: 9909980
    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other, a first quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a first light incident surface facing the first light-emitting surface, a second quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a second light incident surface facing the second light-emitting surface, and a resin member covering at least the second light-emitting surface and the second light incident surface and having optical transparency and an electrical insulation property. A first space in which a fluid to be analyzed is disposed is provided in a first area between the first light-emitting surface and the first light incident surface.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: March 6, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio Ito, Tatsuo Dougakiuchi, Tadataka Edamura
  • Publication number: 20170243994
    Abstract: A quantum cascade detector includes a semiconductor substrate; an active layer having a cascade structure; a lower cladding layer provided between the active layer and the substrate and having a lower refractive index than the active layer; a lower metal layer provided between the lower cladding layer and the substrate; an upper cladding layer provided on an opposite side to the substrate with respect to the active layer and having a lower refractive index than the active layer; and an upper metal layer provided on an opposite side to the active layer with respect to the upper cladding layer. A first end face being in a waveguide direction in a waveguide structure with the active layer, lower cladding layer, and upper cladding layer is an entrance surface for light to be detected.
    Type: Application
    Filed: February 3, 2017
    Publication date: August 24, 2017
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo DOUGAKIUCHI, Akio ITO, Tadataka EDAMURA, Kazuue FUJITA
  • Publication number: 20170115213
    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other, a first quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a first light incident surface facing the first light-emitting surface, a second quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a second light incident surface facing the second light-emitting surface, and a resin member covering at least the second light-emitting surface and the second light incident surface and having optical transparency and an electrical insulation property. A first space in which a fluid to be analyzed is disposed is provided in a first area between the first light-emitting surface and the first light incident surface.
    Type: Application
    Filed: October 17, 2016
    Publication date: April 27, 2017
    Inventors: Akio ITO, Tatsuo DOUGAKIUCHI, Tadataka EDAMURA
  • Publication number: 20170063044
    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2, and to generate output light of a difference frequency ? by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ?1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.
    Type: Application
    Filed: August 30, 2016
    Publication date: March 2, 2017
    Inventors: Tatsuo DOUGAKIUCHI, Kazuue FUJITA, Akio ITO, Tadataka EDAMURA
  • Publication number: 20170063038
    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer having a multistage lamination of emission layers and injection layers. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2, and to generate output light of a difference frequency ? by difference frequency generation. An external diffraction grating is provided for generating the first pump light, outside an element structure portion including the active layer, and an internal diffraction grating is provided for generating the second pump light, inside the element structure portion. The frequency ?2 is set to be fixed to a frequency not coincident with a gain peak, and the frequency ?1 is set to be variable to a frequency different from the frequency ?2.
    Type: Application
    Filed: August 31, 2016
    Publication date: March 2, 2017
    Inventors: Akio ITO, Tatsuo DOUGAKIUCHI, Kazuue FUJITA, Tadataka EDAMURA
  • Patent number: D892656
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: August 11, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Masahiro Hitaka, Tadataka Edamura
  • Patent number: D892657
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: August 11, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Masahiro Hitaka, Tadataka Edamura