Abstract: A method for manufacturing a semiconductor device includes forming a bonding layer on a back-surface of a semiconductor element, mounting the semiconductor element on a base member, and bonding the semiconductor element to the base member by pressing the semiconductor element on the base member. The bonding layer includes tin. The base member includes a plating layer that includes silver and tin. The base member is heated at a prescribed temperature. The semiconductor element is placed on the base member so that the bonding layer contacts the plating layer on the base member.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of a second conductivity type, an insulating section, and a semiconductor section. The second semiconductor region is provided on the first semiconductor region. A carrier concentration of the first conductivity type of the second semiconductor region is lower than a carrier concentration of the first conductivity type of the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating section is provided around the first semiconductor region and the second semiconductor region. The insulating section is in contact with the second semiconductor region. The semiconductor section is provided around the insulating section. The semiconductor section is not in contact with the first semiconductor region.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of a second conductivity type, an insulating section, and a semiconductor section. The second semiconductor region is provided on the first semiconductor region. A carrier concentration of the first conductivity type of the second semiconductor region is lower than a carrier concentration of the first conductivity type of the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating section is provided around the first semiconductor region and the second semiconductor region. The insulating section is in contact with the second semiconductor region. The semiconductor section is provided around the insulating section. The semiconductor section is not in contact with the first semiconductor region.

Abstract: According to one embodiment, in a method of manufacturing a semiconductor device, a plurality of first impurity layers of a second conductivity type are formed. A first epitaxial layer of a first conductivity type is formed. A plurality of second impurity layers of a second conductivity type are formed. Thereafter, a second epitaxial layer of a first conductivity type having a smaller thickness than the first epitaxial layer is formed. The first impurity layers of a second conductivity type and the second impurity layers of a second conductivity type are bonded to each other by heat treatment thus forming a plurality of pillar layers of a second conductivity type. A second semiconductor layer of a second conductivity type which is brought into contact with the pillar layers of a second conductivity type is formed over a surface of the second epitaxial layer.

Abstract: A resin sheet for circuit boards (2) obtained from a macromolecular material of the energy ray curable type and used for embedding circuit chips, which has a double bond concentration of 4.5 to 25 mmol/g before being cured by irradiation with an energy ray; a sheet for circuit boards including the resin sheet for circuit boards, one face of the resin sheet being formed on a support (1); and a circuit board for displays (5) which is obtained by embedding circuit chips (3) into a face of the resin sheet for circuit boards in the sheet for circuit boards, followed by curing the resin sheet by irradiation with an energy ray. The resin sheet for circuit boards (2) can be advantageously used for producing circuit boards having embedded circuit chips for controlling each pixel of displays, in particular, flat panel displays efficiently with excellent quality and productivity.

Abstract: The method for producing a circuit substrate of the present invention is characterized in that the circuit substrate is produced using as sheet a circuit substrate sheet including an uncured layer a part of which, the part being other than a part at which a circuit chip is disposed, is selectively curable before or after disposal of said circuit chip, wherein the uncured layer has a softness that enables embedding of the circuit chip in the circuit substrate sheet upon pressing the circuit chip that has been disposed on a surface of the uncured layer. According to the method for producing the circuit substrate of the present invention, the circuit chip can be embedded inwards with high accuracy, and the circuit substrate can be produced easily with high accuracy.

Abstract: A resin sheet for circuit boards (2) obtained from a macromolecular material of the energy ray curable type and used for embedding circuit chips, which has a double bond concentration of 4.5 to 25 mmol/g before being cured by irradiation with an energy ray; a sheet for circuit boards including the resin sheet for circuit boards, one face of the resin sheet being formed on a support (1); and a circuit board for displays (5) which is obtained by embedding circuit chips (3) into a face of the resin sheet for circuit boards in the sheet for circuit boards, followed by curing the resin sheet by irradiation with an energy ray. The resin sheet for circuit boards (2) can be advantageously used for producing circuit boards having embedded circuit chips for controlling each pixel of displays, in particular, flat panel displays efficiently with excellent quality and productivity.

Abstract: The method for producing a circuit substrate of the present invention is characterized in that the circuit substrate is produced using as sheet a circuit substrate sheet including an uncured layer a part of which, the part being other than a part at which a circuit chip is disposed, is selectively curable before or after disposal of said circuit chip, wherein the uncured layer has a softness that enables embedding of the circuit chip in the circuit substrate sheet upon pressing the circuit chip that has been disposed on a surface of the uncured layer. According to the method for producing the circuit substrate of the present invention, the circuit chip can be embedded inwards with high accuracy, and the circuit substrate can be produced easily with high accuracy.

Abstract: (1) A display substrate for embedding pixel-controlling elements comprising an adhesive layer and a thermoplastic film having a thickness of 50 to 500 ?m which are laminated successively to a base plate successively in this order, wherein a storage modulus (E?) of the adhesive layer is 1.0×106 Pa or greater at 100 to 200° C., and (2) a display substrate for embedding pixel-controlling elements comprising an adhesive layer, a gas barrier layer and a thermoplastic film having a thickness of 50 to 500 pm which are laminated to a base plate successively in this order, wherein a storage modulus (E?) of the adhesive layer is 1.0×104 Pa or greater at 100 to 200° C., and a thickness of the gas barrier layer is 25 nm or greater. A pixel-controlling substrate in which pixel-controlling elements for controlling individual pixels for a display are embedded can be prepared with excellent quality using the display substrate.

Abstract: An evaporation source device comprises a fusion section 24, a retainer section 21, an evaporator section 22, and an ejector section 23. When cylindrical heaters 241 and 211 are electrically energized, a linear evaporation material 31 is fused. A molten evaporation material 32 runs from a heating container 242 and retains in a heating container 212. The evaporation material 32 in the heating container 212 runs down from a descending opening 216 along a descending column 224. The evaporation material 32 evaporates by the radiation heat from the cylindrical heater 221 on the falling process. The vapor of the evaporation material 32 is ejected from the nozzle 232 onto the substrate 61. Each of the cylindrical heaters 241, 211, 221, and 231, which is made of graphite, generates heat when a voltage is applied between electrodes 213 and 214, between electrodes 214 and 222, or between electrodes 232 and 233.

Abstract: A structure in a reactor building to be transported is made small when the structure is carried out from the reactor building and/or when the structure is carried into the reactor building. A beam is used outside a building inside of which a reactor pressure vessel is installed. The beam passes above the reactor pressure vessel and crosses over the building. A lifting machine has a lifting device and is moved on the beam. A shield is provided for shielding radioactive rays radiated from the reactor pressure vessel into the building through an opening portion provided in a roof of the building. The reactor pressure vessel, is moved together with the shield upward through the opening portion using the lifting device.

Abstract: A structure in a reactor building to be transported is made small when the structure is carried out from the reactor building and/or when the structure is carried into the reactor building. A beam is used outside a building inside of which a reactor pressure vessel is installed. The beam passes above the reactor pressure vessel and crosses over the building. A lifting machine has a lifting device and is moved on the beam. A shield is provided for shielding radioactive rays radiated from the reactor pressure vessel into the building through an opening portion provided in a roof of the building. The reactor pressure vessel, is moved together with the shield upward through the opening portion using the lifting device.

Abstract: A predetermined gas, which differs from a cleaning gas and is not required to be decomposed for evacuation, is introduced into a film deposition chamber provided upstream of a main process, wherein a cleaning gas for cleaning the film deposition chamber is introduced into the film deposition chamber, and plasma is developed to decompose the cleaning gas, thereby cleaning up the film deposition chamber. Plasma is developed before introduction of the cleaning gas. Alternatively, subsequent to the main process, a predetermined gas, which differs from the cleaning gas and is not required to be decomposed for evacuation, is introduced into the film deposition chamber, and plasma development is continued from the main process. A cleaning gas may be evacuated after substantially totally decomposed.

Abstract: The present invention provides a method of handling a structure and an equipment of handling the structure which can make swing of the structure to be transported small when the structure in a reactor building is curried out from the reactor building and/or when the structure is carried into the reactor building from the outside of the reactor building.

Abstract: A method for generating highly concentrated ozone gas by adsorbing ozone gas generated by an ozonizer with an absorbent within an adsorption column and then separating highly concentrated ozone gas from the adsorption column. Three adsorption columns are arranged in parallel. Each of the adsorption columns is controlled to repeat four steps of an ozone gas adsorbing step, a stabilizing and pressurizing step, an ozone gas desorbing step and a cooling down step. Each of the ozone gas adsorbing step and the ozone gas desorbing step has operation time set twice the operation time of each of the stabilizing and pressurizing step and the cooling down step. An ozone gas concentrating unit comprises three adsorption columns which are set to operate one after another by ⅓ cycle lag. Highly concentrated ozone gas separated at the desorbing step of each adsorption column is once stored in an ozone gas storage vessel.

Abstract: A multi-color organic EL device capable of preventing color mixing due to leakage luminescence while incorporating therein luminous layers formed by mask deposition techniques. Anodes, a hole transport layer, luminous layers different in type from each other and cathodes are laminated. In such a laminate structure, the luminous layers different in type which are arranged adjacently to each other are constructed so as to permit the luminous layer increased in band gap to get between the luminous layer decreased in band gap and the hole transport layer.

Abstract: An equipment diagnosis system for diagnosing the functional state, the deterioration state, the remaining life time state, etc, of various equipment, and comprising an equipment state model portion for modelling the state of a diagnosis target equipment and for outputting information of the functional state, deterioration, remaining life time, etc, of the diagnosis target equipment on the basis of input information; stress information supply means for supplying the equipment stage model portion with appropriate information on stress which is applied to the diagnosis target equipment; comparison means for comparing information outputted from the equipment state model portion with information which is obtained on the basis of an actual maintenance result; and model correction means for correcting a parameter of the equipment state model portion on the basis of the comparison result.

Abstract: A color fluorescent luminous tube is disclosed which is capable of eliminating a problem of cathode poisoning to significantly lengthen the life of the tube. The color fluorescent luminous tube includes getter devices provided to diffuse a part of a getter material toward luminous cells to deposit it as a film on regions adjacent to the luminous cells, so that the film catches impurity gas generated from the luminous cells due to the impingement of electrons thereupon before it reaches a cathode.

Abstract: An apparatus for producing dry ice blocks includes an upper, charging mold having an outlet opening in its lower end and positioned in spaced relationship above a lower, press mold having an inlet opening in its upper end. The charging mold contains a slidable precompression piston and the press mold has a slidable press piston, the two pistons respectively being connected to actuators. A shutter assembly is positioned between the two openings, and includes a shutter having a forward extension which defines a recess therebeneath. The shutter is moved forwardly and backwardly by actuator means from a position wherein both openings are closed, to a position wherein, both openings are open, to a position wherein only the outlet opening is closed. Thereafter, the press piston forms the charge into a block of dry ice. The shutter is then shifted to the outlet only closed position, and the press piston elevates the block into the recess.