Patents by Inventor Tatsuo HIRASAWA
Tatsuo HIRASAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11742190Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.Type: GrantFiled: July 29, 2021Date of Patent: August 29, 2023Assignee: Tokyo Electron LimitedInventors: Einstein Noel Abarra, Hiroyuki Toshima, Shota Ishibashi, Hiroyuki Iwashita, Tatsuo Hirasawa, Masato Shinada
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Patent number: 11479848Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.Type: GrantFiled: January 7, 2021Date of Patent: October 25, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Shota Ishibashi, Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
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Publication number: 20220044920Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.Type: ApplicationFiled: July 29, 2021Publication date: February 10, 2022Inventors: Einstein Noel ABARRA, Hiroyuki TOSHIMA, Shota ISHIBASHI, Hiroyuki IWASHITA, Tatsuo HIRASAWA, Masato SHINADA
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Patent number: 11158492Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.Type: GrantFiled: July 25, 2019Date of Patent: October 26, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
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Publication number: 20210305032Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.Type: ApplicationFiled: March 19, 2021Publication date: September 30, 2021Inventors: Shota ISHIBASHI, Hiroyuki TOSHIMA, Hiroyuki IWASHITA, Tatsuo HIRASAWA
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Publication number: 20210296103Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.Type: ApplicationFiled: March 19, 2021Publication date: September 23, 2021Inventors: Shota ISHIBASHI, Tatsuo HIRASAWA, Hiroyuki TOSHIMA, Hiroyuki IWASHITA
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Publication number: 20210207261Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.Type: ApplicationFiled: January 7, 2021Publication date: July 8, 2021Inventors: Shota ISHIBASHI, Hiroyuki TOSHIMA, Hiroyuki IWASHITA, Tatsuo HIRASAWA
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Publication number: 20200043711Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.Type: ApplicationFiled: July 25, 2019Publication date: February 6, 2020Inventors: Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
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Patent number: 10309005Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.Type: GrantFiled: August 28, 2014Date of Patent: June 4, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuhiko Kojima, Hiroshi Sone, Atsushi Gomi, Kanto Nakamura, Toru Kitada, Yasunobu Suzuki, Yusuke Suzuki, Koichi Takatsuki, Tatsuo Hirasawa, Keisuke Sato, Chiaki Yasumuro, Atsushi Shimada
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Patent number: 10189230Abstract: A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.Type: GrantFiled: June 29, 2017Date of Patent: January 29, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroyuki Toshima, Atsushi Shimada, Tatsuo Hirasawa, Tatsuo Hatano, Shinji Furukawa
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Publication number: 20180001597Abstract: A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.Type: ApplicationFiled: June 29, 2017Publication date: January 4, 2018Inventors: Hiroyuki TOSHIMA, Atsushi SHIMADA, Tatsuo HIRASAWA, Tatsuo HATANO, Shinji FURUKAWA
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Publication number: 20160251746Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.Type: ApplicationFiled: August 28, 2014Publication date: September 1, 2016Inventors: Yasuhiko KOJIMA, Hiroshi SONE, Atsushi GOMI, Kanto NAKAMURA, Toru KITADA, Yasunobu SUZUKI, Yusuke SUZUKI, Koichi TAKATSUKI, Tatsuo HIRASAWA, Keisuke SATO, Chiaki YASUMURO, Atsushi SHIMADA
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Patent number: 9406557Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.Type: GrantFiled: June 26, 2014Date of Patent: August 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Osamu Yokoyama, Cheonsoo Han, Takashi Sakuma, Chiaki Yasumuro, Tatsuo Hirasawa, Tadahiro Ishizaka, Kenji Suzuki
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Patent number: 9406558Abstract: Cu wiring fabrication method for fabricating Cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming Ru film on surface of the barrier film by CVD; burying the trench by forming Cu film or Cu alloy film on the Ru film; forming Cu film or Cu alloy film at corners of bottom of the trench while re-sputtering the formed Cu film or Cu alloy film in a condition where first formed Cu film or Cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the Cu film or the Cu alloy film in the trench in condition where the Cu film or the Cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.Type: GrantFiled: May 1, 2015Date of Patent: August 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Tadahiro Ishizaka, Tatsuo Hirasawa, Takashi Sakuma, Osamu Yokoyama
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Patent number: 9253862Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.Type: GrantFiled: October 2, 2013Date of Patent: February 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Tatsuo Hirasawa, Osamu Yokoyama, Chiaki Yasumuro, Toshiaki Fujisato, Ryota Yoshida, Takashi Sakuma, Cheonsoo Han
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Publication number: 20150332961Abstract: Cu wiring fabrication method for fabricating Cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming Ru film on surface of the barrier film by CVD; burying the trench by forming Cu film or Cu alloy film on the Ru film; forming Cu film or Cu alloy film at corners of bottom of the trench while re-sputtering the formed Cu film or Cu alloy film in a condition where first formed Cu film or Cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the Cu film or the Cu alloy film in the trench in condition where the Cu film or the Cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.Type: ApplicationFiled: May 1, 2015Publication date: November 19, 2015Inventors: Tadahiro ISHIZAKA, Tatsuo HIRASAWA, Takashi SAKUMA, Osamu YOKOYAMA
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Publication number: 20150240344Abstract: A ruthenium film forming method includes: placing a target substrate in a processing container; supplying ruthenium carbonyl gas together with CO gas as a carrier gas into the processing container, the ruthenium carbonyl gas being generated from solid-state ruthenium carbonyl; supplying additional CO gas into the processing container; and forming a ruthenium film on the target substrate by decomposing the ruthenium carbonyl gas.Type: ApplicationFiled: February 16, 2015Publication date: August 27, 2015Inventors: Tadahiro ISHIZAKA, Takashi SAKUMA, Tatsuo HIRASAWA
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Publication number: 20150004784Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.Type: ApplicationFiled: June 26, 2014Publication date: January 1, 2015Inventors: Osamu YOKOYAMA, Cheonsoo HAN, Takashi SAKUMA, Chiaki YASUMURO, Tatsuo HIRASAWA, Tadahiro ISHIZAKA, Kenji SUZUKI
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Publication number: 20140090597Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Tatsuo HIRASAWA, Osamu YOKOYAMA, Chiaki YASUMURO, Toshiaki FUJISATO, Ryota YOSHIDA, Takashi SAKUMA, Cheonsoo HAN