Abstract: A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e≦0.2×&sgr;b formula (1) Ui≧2.0×10−6×&sgr;ei formula (2) Ud≧4.

Abstract: A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e≦0.2×&sgr;b formula (1) Ui≧2.0×10−6×&sgr;ei formula (2) Ud≧4.

Abstract: In the present invention, provided are i) an encapsulant composition comprising an epoxy resin, a curing agent, an inorganic filler, an adduct of triphenylphosphine with benzoquinone, and a hydrous bismuth nitrate oxide; the inorganic filler being mixed in an amount of from 70% by volume to 85% by volume based on the total weight of the encapsulant composition, and the hydrous bismuth nitrate oxide being mixed in an amount of from 2.5 parts by weight to 20 parts by weight based on 100 parts by weight of the epoxy resin, and ii) an electronic device having an encapsulating member comprising a cured product of this encapsulant composition.

Abstract: An LOC structure semiconductor device having a good solder heat resistance without electrical characteristic failures due to damages to the passivation film and the diffusion layer thereunder attributing to the filler can be obtained by encapsulating an LOC structure semiconductor chip with an encapsulating material comprising an epoxy resin, a curing agent, a curing promoter, and an inorganic filler, the filler having a smaller particle size than the distance between a inner lead and a semiconductor chip and being in an amount of 80 to 95% by weight based on the total weight of the encapsulating material.

Abstract: A resin-encapsulated semiconductor which is free from the occurrence of blisters or cracks during soldering, suits for continuous production and has excellent moisture resistance reliability is obtained by using an epoxy resin encapsulating material which comprises(A) an epoxy resin component,(B) a curing agent represented by the following general formula (II), ##STR1## wherein m is a number of 0 to 30, (C) at least one cure accelerator selected from the group consisting of compounds represented by the following formulae (III) and (IV), ##STR2## (D) a release agent selected from the group consisting of a polyethylene wax or a mixture thereof with carnauba wax and a mixture of a polyethylene wax or a montanic ester wax, and (E) 65 to 90% by volume of fused silica as a filler.

Abstract: A resin encapsulated semiconductor device sealed with an epoxy resin molding material particularly containing a brominated epoxy resin as a flame retardant with the bromine content of 0.5% by weight or less, antimony oxide as a flame retardant in an amount of 2.0% by weight or more and a quaternary phosphonium tetrasubstituted borate as a curing accelerator is excellent in connection reliability at Au/Al junctions and heat resistance.