Abstract: A metal filling apparatus fills molten metal into a minute space formed on a surface of a semiconductor wafer. The apparatus has a processor body with a chamber in which the wafer is held, a molten metal supply, and a molten metal recovery mechanism. The supply includes a tank in which molten metal is stored, a supply pipe connected between the chamber and the tank, a supplier interposed in the supply pipe to supply molten metal from the tank to the processing chamber, and the recovery mechanism recovers molten metal from the processing chamber.

Abstract: A metal filling apparatus 1 fills a molten metal M into a minute space formed on a surface of a semiconductor wafer K. The metal filling apparatus 1 has a processor body 2 having a processing chamber 5 in which the semiconductor wafer K is held, a molten metal supply mechanism 10, and a molten metal recovery mechanism 20. The molten metal supply mechanism 10 includes a supply tank 11 in which the molten metal M is stored, a supply pipe 13 connected to the processing chamber 5 of the processor body 11 and the supply tank 11, and a supplier 12 interposed in the supply pipe 13 and supplying the molten metal M in the supply tank 11 into the processing chamber 5 through the supply pipe 13, and the molten metal recovery mechanism 20 recovers the molten metal M supplied into the processing chamber 5 from the processing chamber 5.

Abstract: A substrate ozone processing device includes: a substrate-carrying/heating platform; above the platform, a gas supply head made up of a main head unit bored with platform-directed vent holes, gas conduits connected at their basal ends to the gas vent holes and separated by an interspace communicating with the gas-supply-head exterior, and a plurality of coplanar facing plates perforated, top-side-to-underside, with gas-discharging through-holes receiving the distal ends of the gas conduits, and with a latticework of gaps surrounding the discharging through-holes and communicating with the interspace; and a gas supply device for supplying ozone gas to the discharging through-holes. The facing plates are of small volume such that even should heat transfer between the plates and the substrate occur, thermal equilibrium between the plates and the substrate is reached in a short time, facilitating substrate temperature management.

Abstract: This is a discharge cell used for an ozonizer. A space where a discharge gap amount is determined between the first electrodes 10 and 10 is formed by stacking a couple of upper and lower first electrodes 10 and 10, constituted by the plate-like rigid body, in both sides with sandwiching a couple of rigid body spacers 20 and 20. In this space, a dielectric body unit 30 that consists of a rigid body of the sandwich structure of sandwiching a second electrode 32 is arranged between glass plates 31 and 31. The dielectric body unit 30 is supported in a neutral position in the space by a plurality of spacers 40, 40, . . . for discharge gap formation that are inserted between the upper and lower first electrodes 10, and forms discharge gaps 50 and 50 in both sides. The minimum discharge gap amount G of 0.4 mm or less is stably secured. It is possible to prevent the damage of a cell component and a pressurizing mechanism.

Abstract: This is a discharge cell used for an ozonizer. A space where a discharge gap amount is determined between the first electrodes 10 and 10 is formed by stacking a couple of upper and lower first electrodes 10 and 10, constituted by the plate-like rigid body, in both sides with sandwiching a couple of rigid body spacers 20 and 20. In this space, a dielectric body unit 30 that consists of a rigid body of the sandwich structure of sandwiching a second electrode 32 is arranged between glass plates 31 and 31. The dielectric body unit 30 is supported in a neutral position in the space by a plurality of spacers 40, 40, . . . for discharge gap formation that are inserted between the upper and lower first electrodes 10, and forms discharge gaps 50 and 50 in both sides. The minimum discharge gap amount G of 0.4 mm or less is stably secured. It is possible to prevent the damage of a cell component and a pressurizing mechanism.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 includes: a placement table 20 on which the substrate K is placed; a heating unit for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lifter 30 for moving the placement table 20 up and down; and a control unit 35 for controlling the operation of said lifter 30.

Abstract: An ozone processing device includes: a mounting base on which a substrate is mounted; a heating device to heat the substrate on the mounting base; a plurality of plates facing the substrate on the mounting base and equipped with discharge openings on the surface facing the substrate that discharge ozone gas in the direction of the substrate; and a gas supply device supplying ozone gas to the discharge openings of the plates to allow them to discharge gas. The plates are arranged in a co-planar manner with gaps formed between adjacent plates. The plates have a small volume so that even if there is heat transfer between the plates and the substrate, thermal equilibrium is achieved between the plates and the substrate in a short time, thus making temperature management of the substrate easy.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 comprises: a placement table 20 on which the substrate K is placed; a heating means for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lift means 30 for moving the placement table 20 up and down; and a control means 35 for controlling the operation of said lift means 30.

Abstract: There is disclosed an overlock sewing machine. The overlock sewing machine includes a looper switching unit for selecting an overlocking operative state or overlocking inoperative state, a needle clamp member having a first needle holding hole in which two needles are mounted separately in the manner that the two needles are positioned in parallel and a second needle holding hole positioned slightly eccentrically at the front side of the cloth feeding direction and perpendicular to the cloth feeding direction, whereby eight types of overlocking operations and one type of double-loop stitching operation can be effected.

Abstract: A high valency salt, such as TiCl.sub.4 is reduced to a lower valency salt, such as TiCl.sub.2 and/or TiCl.sub.3 within a fused salt electrolytic bath via electrolysis so that an improved electrodeposition of a desired metal or alloy, such as Ti, occurs, from such adjusted bath. The process generally comprises adding a higher valency salt of a desired metal or alloy to a fused salt electrolytic bath, reducing the higher valency salt on a cathode electrode to a lower valency salt, removing the so-produced lower valency salt from the electrode surface and maintaining a predetermined amount of the lower valency salt within the electrolytic bath. Electrodeposition of a desired metal or alloy may then take place from such electrolytic bath containing a so-adjusted amount of the lower valency salt.

Abstract: An electroposition process wherein solid metallic particles are produced in a fused salt electrolytic bath and dispersed therein to electrodeposit a metal or alloy thereof on a cathode so that the surface of the deposit is maintained smooth and flat. In order to produce particles of a desired metal or alloy, an auxiliary electrolytic means may be provided within an electrolytic cell so that such particles are generated in situ within the fused bath of such cell.

Abstract: In the electrodeposition of titanium metal from an electrolyte containing one or more dissolved or fused titanium chlorides and other dissolved or fused chloride salts, such as, MgCl.sub.2,CaCl.sub.2,NaCl, and the like; the hardness of the electrodeposited titanium is adjusted by adding to the electrolyte one or more oxides, such as titanium oxide and oxides of alkaline and alkaline-earth metals, and/or one or more fluorides of alkaline and alkaline-earth metals.