Abstract: The information processing device includes: a cultivation information acquisition unit configured to acquire cultivation information of a cell; and a recommended condition setting unit configured to set a recommended condition for detaching the cell from a to be-processed vessel in which the cell is cultured, the cultivation information including information about the to-be-processed vessel, the recommended condition being a condition for detaching the cell by applying vibration to the to-be-processed vessel, the recommended condition setting unit being configured to set the recommended condition based on the cultivation information, with use of information concerning an association relationship between information about a cultivation condition and information about a detachment condition, the information about the cultivation condition including information about a culture vessel, the information about the detachment condition including information about a condition for applying vibration to the culture vess

Abstract: The information processing device includes: a cultivation information acquisition unit configured to acquire cultivation information of a cell; and a recommended condition generation unit configured to generate a recommended condition for detaching the cell from a to-be-processed vessel in which the cell is cultured, the cultivation information including information about the to-be-processed vessel, the recommended condition being a condition for detaching the cell by applying vibration to the to-be-processed vessel, the recommended condition generation unit being configured to generate the recommended condition based on the cultivation information, with use of a learned model, the learned model being learned with use of information about a cultivation condition and information about a detachment condition, the information about the cultivation condition including information about a culture vessel, the information about the detachment condition including information about a condition for applying vibration t

Abstract: A sustained release pesticide comprises solid pesticidal particles comprising a solid, pesticidally active ingredient, substantially the whole surface of the pesticidal particles being coated with a hydrophobic substance.

Abstract: A floating body comprising a first swelling portion having a gas inlet port through which gas is introduced and a plurality of second swelling portions each being held in fluid communication with the first swelling portion. The first and second swelling portions are formed by folding a single multi-layer film to form a nonpleat portion corresponding to the first swelling portion and pleat portions corresponding to the second swelling portions and by sealing the folded multi-layer film along a continuous seal line which extends over both the pleat and nonpleat portions and forms the gas inlet port in the nonpleat portion.

Abstract: A method for producing a floating body such as a balloon and the like which has a first swelling portion with a gas inlet port and a plurality of second swelling portions each communicating with the first swelling portion, comprising the steps of:folding a single multi-layer film having a sealing capability and pleat portions so that the nonpleat portion, correspond to the first swelling portion of the floating body is formed in the film and pleat portions corresponding to the plurality of second swelling portions;sealing the folded multi-layer film along a seal line which extends over both the pleat and nonpleat portions and forms the gas inlet port in the nonpleat portion to produce the first swelling portion and the plurality of second swelling portions; and cutting and removing material located externally of the sealed multi-layer film along a line substantially parallel to the seal line.

Abstract: There is provided a semiconductor device which comprises device regions and isolation regions to isolate the device regions from each other on a semiconductor substrate, wherein field insulators are formed in the isolation regions and conduction layers for wiring are formed above the field insulators. An additional impurity buried layer having an opposite conductivity to the semiconductor substrate is formed under the field insulators. Therefore the first capacitance element is composed of the conductive layer, the impurity buried layer, and the field insulator therebetween. The second capacitance element is composed of the impurity buried layer, the semiconductor substrate, and a PN junction layer therebetween. Thus the first capacitance element and the second capacitance element are connected in series.

Abstract: A MOSFET utilizes a buried channel structure comprising a buried channel between a source electrode and a drain electrode. The device also comprises a gate electrode made of material whose Fermi level is located between a conduction band and a valency band of a semiconductor. An impurity concentration in the substrate is relatively high because of buried channel structure.