Abstract: A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer including an n-type nitride semiconductor layer; a p-side semiconductor layer including a p-type nitride semiconductor layer; and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor, the active layer including a well layer made of a nitride semiconductor. The p-side semiconductor layer includes, in order from an active layer side, a first layer including Ga, Al, In, and N, a second layer containing Ga, Al, and N, and a third layer including Ga and N, the second layer being thinner than the first layer. A bandgap energy of the second layer is larger than a bandgap energy of the well layer. A p-type impurity concentration of the third layer is higher than a p-type impurity concentration of the first layer. A composition ratio of Al in the second layer is higher than a composition ratio of Al in the first layer.