Abstract: The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Abstract: The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Abstract: The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Abstract: A neutron generating apparatus includes an ion generating device. The ion generating device includes an ion generating tube to which deuterium gas or tritium gas is supplied, a magnet arranged outside of the ion generating tube for generating a magnetic field in the ion generating tube, a plasma generating antenna arranged outside of the ion generating tube for generating an electric field in the ion generating tube, and an RF power source that supplies high frequency power to the plasma generating antenna. The RF power source supplies the high frequency power to the plasma generating antenna by controlling the pulse thereof so that an unsteady state of plasma is generated repetitively in the ion generating tube.

Abstract: The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Abstract: A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.

Abstract: The whole antenna conductor is housed in the interior of a vacuum container of a plasma generator thereby to eliminate the need for an insulating partition or a top plate so that the whole induction field radiated from the antenna can be effectively utilized. Furthermore, the occurrence of abnormal discharge is suppressed to stabilize a high-density plasma by reducing the inductance of the antenna and covering the antenna conductor with an insulator.

Abstract: A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.

Abstract: The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Abstract: The whole antenna conductor is housed in the interior of a vacuum container of a plasma generator thereby to eliminate the need for an insulating partition or a top plate so that the whole induction field radiated from the antenna can be effectively utilized. Furthermore, the occurrence of abnormal discharge is suppressed to stabilize a high-density plasma by reducing the inductance of the antenna and covering the antenna conductor with an insulator.

Abstract: A closure plate for detachable attachment to the opening formed in a floor panel is provided. The closure plate includes a flexible, integral locking pawl provided with a protrusion at a desired position thereof. The resiliently deformable locking pawl can be formed integrally with the closure plate, and can have an enlarged portion at the free end of the pawl, and the plate can have a manipulation bore with a recessed surface in the inner periphery thereof for receiving the free end of the pawl. The closure plate includes at least in the upper surface thereof a guide portion defining a wiring port.

Abstract: A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.

Abstract: The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

Abstract: A device for fixing floor panels mounted on a surface of a base floor by means of support legs which permit vertical adjustment of the floor panels is provided. The fixing device comprises a retainer plate fixed to the base floor for receiving the support legs therein; a support member extending vertically from the retainer plate and having an internally threaded portion; a panel holder; and a bearing member for the panel holder. The bearing member includes one end thereof threaded into the internally threaded portion of the support member for rotatable movement of the bearing member relative to the retainer plate. The bearing member is adapted to be accessible through the floor panels for operation thereof. The panel holder is adapted to be engageable with the bearing member in order to fix the floor panels.

Abstract: The present invention is a device for supporting floor panels in which when the floor panels are clamped by a single-operation type panel retainer, a retaining member of a vertically swingable panel retainer support on a stud bolt is urged downwardly by the resilient force of a compression spring washer interposed between the upper surface of the retainer member and the lower surface of the head portion of the stud bolt for tightly securing the floor panels to the panel pedestal.The present invention further provides a structure for supporting floor panels in which a supporting post is swingably raised on the pedestal base plate, side walls of corners of the floor panels placed on the panel pedestal being matchingly engaged with a guide wall of the panel pedestal support and mating projections of said panel pedestal being closely fitted into mating holes formed by embedding resin holders in said floor panels, whereby the floor panels are tightly secured by a panel retainer to the panel pedester.

Abstract: The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

Abstract: The present invention relates to a double flooring structure which may be used to constitute the floor of a computer room or the like in a building. The double flooring structure has excellent constructibility, high earthquake resistance, a wide underfloor space and excellent resistant to deformation under load. The double flooring structure of the present invention comprises bases secured to a floor surface, columnar leg members pivotally standing on the bases, respectively, stringers each stretched between a pair of adjacent columnar leg members, floor panels supported on the stringers, and fastening means for securing the floor panels to the columnar leg members. The pivot point of each columnar leg member is disposed near the floor surface. When the floor panels are secured to the columnar leg members by the fastening means, the columnar leg members, the stringers and the floor panels constitute in combination one rigid body.

Abstract: An access door to be installed on the ceiling or the like of a building which essentially comprises an outer square frame adapted to be installed in an opening formed at said installation area; an inner square frame pivotally connected to said outer frame for movement between open and closed positions; a pair of link hinge means provided on each of two selected sides of said outer frame to pivotally connect said frame to said outer frame; and a lock means for locking said inner frame to said outer frame as the inner frame is in its closed position.The inner frame has a joint finishing flange at the peripheral edge thereof to conceal the peripheral edge of said outer frame as the inner frame is in its closed position.