Abstract: On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET.

Abstract: A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.

Abstract: The present invention provides:a process for producing an alkali metal salt of an arylmercaptan compound, represented by general formula (3): ##STR1## which process comprises reacting a disulfide compound represented by general formula: ##STR2## with a hydroxide of an alkali metal M.sup.1 in the presence of a sulfur compound represented by general formula (2):H.sub.(2-i) S(M.sup.1).sub.i (2)a process for producing an alkoxycarbonylalkylthioaryl compound represented by general formula (5): ##STR3## which process comprises reacting the above-mentioned alkalimetal salt of an arylmercaptan compound with a halogenofattyacid ester compound represented by general formula (4):X.sup.1 R.sup.2 COOR.sup.3 (4)at pH 7-10; anda process for producing the above-mentioned alkoxycarbonylalkylthioaryl compound, which process comprises reacting the above-mentioned disulfide compound with the above-mentioned hydroxide of an alkali metal M.sup.

Abstract: The present invention provides a process for producing a hexahydropyridazine-1,2-dicarboxy derivative represented by the general formula: ##STR1## wherein R.sup.1 and R.sup.2 represent each independently an alkyl group, by reacting a hydrazinedicarboxy derivative represented by the general formula:R.sup.1 OOC--NH--NH--COOR.sup.2 (1)wherein R.sup.1 and R.sup.2 have the same meaning as mentioned above, with a dihalogenobutane represented by the general formula:X.sup.1 --CH.sub. CH.sub.2 CH.sub.2 CH.sub.2 --X.sup.2 (2)wherein X.sup.1 and X.sup.2 represent each independently a halogen atom, in the presence of an alkali metal hydroxide, characterized in that the above reaction is effected in an aprotic polar solvent, and a process for producing a hexahydropyridazine, characterized by decarboxylating the thus obtained hexahydropyridazine-1,2-dicarboxy derivative (3) without isolation in the presence of an alkali metal hydroxide and a hydrogen-denoting compound.

Abstract: A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

Abstract: On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET.

Abstract: A print pattern is formed on a glass plate 1 by using a screen plate in which a second ink-permeable region 7 having a lower ink-permeating rate than a first ink-permeable region 4 is formed in a screen region which corresponds to a space between the flat edge portion of the first ink-permeable region 4 and the outer end portion of the glass plate 1, whereby the formation of a locally raised portion in the film formed by printing at its end portion is avoided, and a decorative print is formed by a simple method without leaving a space in a flat end portion of the glass plate.

Abstract: On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET.

Abstract: A glass plate is bend-shaped by transferring a glass plate by way of transferring rollers in a heating furnace; sucking and suspending the glass plate by way of a glass plate sucking and suspending device which is disposed in the heating furnace and at the downstream side of the transferring rollers; moving arms of a positioning device disposed at the lower portion of the glass plate sucking and suspending device in the direction parallel to a glass plate suspension surface of the glass plate sucking and suspending device; sucking and suspending glass plate supporting portions each connected to the top end of each of the arms by interposing a joint portion so as to keep the distance between the glass plate supporting portions and the glass plate sucking and suspending device at a predetermined value; supporting edge portion of the glass plate by the glass plate supporting portions, and positioning the glass plate to a predetermined position by advancing and retracting the arms in the direction parallel to the

Abstract: A process for producing a benzylamine which comprises reacting a benzyl halide with an aqueous ammonia solution in the presence of an aromatic aldehyde represented by the formula: ##STR1## wherein R represents a hydrogen atom, a halogen atom or a lower alkyl group, and n is 1 or 2, separating an oily substance from the reaction mixture, and treating the oily substance with a mineral acid.

Abstract: Provided are optical shaped articles for CRT, such as projection lens and filter used for the CRT's of projection TV's, which comprise a transparent synthetic resin containing a red dyestuff or a combination of a green organic pigment and a yellow dyestuff and having specified spectral transmittance characteristics.

Abstract: A bend-shaping press mold comprising a pair of pressing dies for bending a glass plate into a shape having a convex surface and a concave surface in a plane by pressing the glass plate with the pair of pressing dies, wherein each of the pressing dies has a convex surface portion to shape the glass plate by pressing it from each side which is finally shaped to have a concave surface portion, and the convex surface portion of one of the pressing dies is not substantially in contact with the glass plate in pressing operations when the convex surface portion of the other die is in contact with the glass plate.

Abstract: Glass plates for a laminated glass are bent and strengthened by provisionally shaping by heating two overlapping glass plates placed on a deadweight bending mold having a shaping surface by elevating the temperature to a temperature capable of bending glass and by locally heating side portions of the two overlapping glass plates to be deeply bent at a higher temperature in a heating/pressing stage so that the two overlapping glass plates are provisionally shaped by their own deadweight into a shape substantially corresponding to the shape of the shaping surface of the bending mold, pressing a portion of the two overlapping glass plates to be deeply bent from the top by a pressing member after the provisional shaping step in a heating/pressing stage, separating the two overlapping glass plates from the bending mold by pushing up the portion of the glass plates other than the deeply bent peripheral portion of the two overlapping glass plates thereby cooling the peripheral portion of the glass plates in a periph

Abstract: Two glass plates on a bending mold are heated in a heating/bending furnace so that they are subjected to provisionally deep-bending operations by their own deadweight, and the provisionally shaped deep-bent portion is pressed by an auxiliary pressing member to thereby form a laminated glass for, for instance, an automobile.

Abstract: Two glass plates on a bending mold are heated in a heating/bending furnace so that they are subjected to provisional deep-bending operations by their own deadweight, and the provisionally shaped deep-bent portion is pressed by an auxiliary pressing member to thereby form a laminated glass for, for instance, an automobile.