Abstract: The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.

Abstract: This invention relates to a layered photoconductor having a charge generating layer and a charge transfer layer superimposed on an electroconductive substrate, which photoconductor has as the main component of the charge generating layer an aluminum phthalocyanine derivative which is represented by the formula, AlC.sub.32 N.sub.8 H(17-x)Cl.sub.x (wherein x=1.0 to 3.0), has the loss of weight on heating of 6.+-.0.5% by weight, shows strong X-ray diffraction peaks at 6.7 degrees, 11.2 degrees, 16.7 degrees, and 25.6 degrees, and shows the maximum absorption of the visible absorption spectrum in a wavelength range of 640 nm to 660 nm or 750 nm to 850 nm.The photoconductor according to this invention is highly sensitive without suffering from dispersion of performance, exhibits high sensitivity in various ranges of wavelength, and does not cause fogging in actual printing.