Abstract: In step St1 shown in FIG. 1, a reaction system including a sample for which the content of a subject substance is to be measured, a specific-binding substance specifically binding to the subject substance, and phthalic acid or phthalate salt is constructed. The pH of the reaction system is set at less than 7. When the subject substance is an antigen, the specific-binding substance is an antibody. In reverse, when the subject substance is an antibody, the specific-binding substance is an antigen. In step St2 in FIG. 1, an optical property of the reaction system is measured. When agglutinate complexes are produced in the step St1, the reaction system becomes turbid, causing a change in scattered light intensity, transmitted light amount and the like. Therefore, by measuring the scattered light intensity, the transmitted light amount or the like, the degree of turbidity of the reaction system can be estimated.

Abstract: In step St1 shown in FIG. 1, a reaction system including a sample for which the content of a subject substance is to be measured, a specific-binding substance specifically binding to the subject substance, and phthalic acid or phthalate salt is constructed. The pH of the reaction system is set at less than 7. When the subject substance is an antigen, the specific-binding substance is an antibody. In reverse, when the subject substance is an antibody, the specific-binding substance is an antigen. In step St2 in FIG. 1, an optical property of the reaction system is measured. When agglutinate complexes are produced in the step St1, the reaction system becomes turbid, causing a change in scattered light intensity, transmitted light amount and the like. Therefore, by measuring the scattered light intensity, the transmitted light amount or the like, the degree of turbidity of the reaction system can be estimated.

Abstract: A method is provided for immunologically measuring a subject substance contained in a sample, which comprises the step of forming an antigen-antibody complex of the subject substance and a specifically binding substance capable of specifically binding to the subject substance in the presence of tricarboxylic acid or tricarboxylate and under acidic conditions. A reagent containing tricarboxylic acid or tricarboxylate for use in the method is also provided. The reagent contains a subject substance and a specifically binding substance capable of immunologically and specifically binding to the subject substance. The reagent is prepared so that the subject substance and the specifically binding substance are bound together under acidic conditions to form an antigen-antibody complex.

Abstract: A plasma display panel for plasma display system provides excellent optical characteristics, including a color purity, contrast, and luminance, of a plasma display system. Barrier ribs forming a cell has wavelength-selective reflective filters for reflecting only a light of wavelength needed for display and absorbing the other lights coated thereon. The wavelength-selective reflective filters have phosphors coated thereon. A color filter is inserted between a first front panel and second front glass panel for feeding out the light in a sandwich state.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Abstract: Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Abstract: An image intensifier tube and a solid-state image pickup device are combined to form a unified image pickup device. A thin fiber plate with thickness of 0.5-1.5 mm is interposed between a phosphor layer of the image intensifier tube and a photosensitive layer of the solid-state image pickup device. A microchannel plate may be incorporated to multiply photoelectrons emitted from a photocathode.

Abstract: A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

Abstract: An image intensifier tube and a solid-state image pickup device are combined to form a unified image pickup device. A thin transparent glass layer polished to a thickness of 50 microns or less is interposed between a phosphor layer of the image intensifier tube and a photosensitive layer of the solid-state image pickup device. A microchannel plate may be incorporated to multiply photoelectrons emitted from a photocathode.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Abstract: A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.