Abstract: A method of manufacturing a semiconductor element includes forming a mask on a front surface of a substrate, the mask having an opening to expose the front surface; growing a first semiconductor layer by epitaxially growing a semiconductor along the mask, starting from the front surface exposed through the opening, and growing a second semiconductor layer on a surface of the first semiconductor layer located opposite to the substrate in a layering direction, and providing an electrode on a surface of the second semiconductor layer located opposite to the surface of the first semiconductor layer in the layering direction. A width from an end portion of the surface to the electrode is smaller than a width of the mask.

Abstract: A manufacturing method for a semiconductor element includes providing a mask including an opening on a surface of a substrate while leaving a step difference in the mask at an upper surface region around the opening, epitaxially growing a semiconductor from the surface exposed through the opening to over the upper surface region around the opening, to produce a semiconductor element including a semiconductor layer including a first surface to which the step difference is transferred, and dry-etching the first surface of the semiconductor layer to transfer the step difference, the first surface being a contact surface with the mask before the dry etching is performed. The mask contains an element that serves as a donor or an acceptor in the semiconductor layer.

Abstract: A method for manufacturing a semiconductor element includes providing, on a surface of a substrate 11, a mask 12 which has an opening 12a and in which a peripheral upper surface region of the opening is processed to have a predetermined structure, and epitaxially growing a semiconductor from the surface of the substrate exposed from the opening to the top of the peripheral upper surface region to fabricate a semiconductor element having a semiconductor layer 13 with the predetermined structure transferred thereon. In one example, the predetermined structure is due to a shape having a difference in level. In another example, the predetermined structure is due to a selectively arranged element, and the transferred element moves into the semiconductor layer.

Abstract: A method of manufacturing a semiconductor apparatus including a support substrate being common and plural semiconductor devices includes: inspecting, regarding each of plural semiconductor devices arranged on and supported by a support substrate being common thereto, by measuring a predetermined electrical parameter, whether a measured value satisfies a predetermined condition; and forming an electrode by forming an electrode film that is, among the plural semiconductor devices, electrically connected to a semiconductor device that has passed an inspection in the inspecting and electrically insulated from a semiconductor device that has failed the inspection in the inspecting so that the electrode film extends continuously over projected planes onto an arrangement surface of the electrode film, that is, projected planes of semiconductor devices that have passed the inspection and a projected plane of a semiconductor device that has failed the inspection, the semiconductor devices remaining supported by the co

Abstract: A semiconductor device includes: a semiconductor substrate; a first semiconductor layer of a first conductivity type thereon; a second semiconductor layer of a second conductivity type deposited using epitaxial growth on a bottom of the first semiconductor layer; a trench including a lateral surface constituted by the first semiconductor layer and a bottom surface at least partly constituted by the second semiconductor layer; an insulating film that covers the bottom surface and the lateral surface; a conductive body inside the trench; and a metal film electrically connected to the conductive body and forms a Schottky barrier with a surface of the first semiconductor layer. The second semiconductor layer constitutes all or a middle portion of the bottom surface and is within the trench in a plan view of the substrate.

Abstract: A semiconductor device includes: a semiconductor substrate; a semiconductor layer of a first conductivity type that is deposited on a surface of the semiconductor substrate; a trench that is formed on a surface of the semiconductor layer; an insulating film that covers a bottom surface of the trench and a lateral surface of the trench; a conductive body that fills inside the trench that is covered by the insulating film; a second conductive type region that is formed in the semiconductor layer, is arranged under the trench, and is within a region of the trench in a plan view of the semiconductor substrate; and a metal film that is electrically connected to the conductive body and forms a Schottky barrier with the surface of the semiconductor layer.