Abstract: The present invention provides an unbalanced input and balanced output type SAW filter capable of obtaining stop-band attenuation approximately equivalent to that of an unbalanced input and unbalanced output type SAW filter. IDTs (12) (13) are respectively disposed on each side of a middle IDT (11). A comb electrode (11c) of the middle IDT (11) is connected with an input terminal (In) and other comb electrode (11b) is grounded. A comb electrode (12c) of the IDT (12) and a comb electrode (13b) of the IDT (13) are respectively connected with output terminals (Out 1) and (Out 2), and other comb electrode (12b) of the IDT (12) and other comb electrode (13c) of the IDT (13) are connected to each other and grounded.

Abstract: In the surface acoustic wave filter, a longitudinally-coupled double-mode resonator filter formed by arranging a plurality of inter-digital transducers for exciting and receiving a surface acoustic wave adjacent each other in the direction of propagation of the surface acoustic wave is connected in series to a resonator having one or a plurality of inter-digital transducers for exciting and receiving a surface acoustic wave. A cutoff frequency on the high-frequency side of the pass band of the longitudinally-coupled double-mode resonator filter and the antiresonant frequency of the resonator are substantially equal. In the surface acoustic wave filter, the sharpness in the vicinity of the cutoff frequency on the high-frequency side of the pass band is high, sufficient attenuation can be obtained, and the input and output impedance matching state is good.

Abstract: A substrate coated with a transparent conductive film is manufactured by: disposing a substrate 3 and a target 5 constituted of alloy of In and Sn in a film deposition chamber 1; leading an Ar gas ion beam into the film deposition chamber 1, to cause collision of the ion beam with the target 5, sputtering-emission of constitutive atoms of the target 5, and supply of the emitted atoms to the substrate 3; and leading oxide gas including oxygen radicals as a main element thereof from an ECR radical source 6 into the film deposition chamber 1, to deposit an ITO film 9 on the substrate 3. In this manufacturing method, a film is deposited on a film or substrate including an organic material without damaging the organic material. The deposited film has low resistivity, high transmission and preferable flatness.

Abstract: An electroluminescent display device is increased in size by securing plural small-size panels, each incorporating plural electroluminescent elements, to a large-size support with an intervening adhesive layer.

Abstract: A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: A substrate coated with a transparent conductive film is manufactured by: disposing a substrate 3 and a target 5 constituted of alloy of In and Sn in a film deposition chamber 1; leading an Ar gas ion beam into the film deposition chamber 1, to cause collision of the ion beam with the target 5, sputtering-emission of constitutive atoms of the target 5, and supply of the emitted atoms to the substrate 3; and leading oxide gas including oxygen radicals as a main element thereof from an ECR radical source 6 into the film deposition chamber 1, to deposit an ITO film 9 on the substrate 3. In this manufacturing method, a film is deposited on a film or substrate including an organic material without damaging the organic material. The deposited film has low resistivity, high transmission and preferable flatness.

Abstract: The present invention provides an unbalanced input and balanced output type SAW filter capable of obtaining stop-band attenuation approximately equivalent to that of an unbalanced input and unbalanced output type SAW filter. IDTs (12) (13) are respectively disposed on each side of a middle IDT (11). A comb electrode (11c) of the middle IDT (11) is connected with an input terminal (In) and other comb electrode (11b) is grounded. A comb electrode (12c) of the IDT (12) and a comb electrode (13b) of the IDT (13) are respectively connected with output terminals (Out 1) and (Out 2), and other comb electrode (12b) of the IDT (12) and other comb electrode (13c) of the IDT (13) are connected to each other and grounded.

Abstract: In the surface acoustic wave filter, a longitudinally-coupled double-mode resonator filter formed by arranging a plurality of inter-digital transducers for exciting and receiving a surface acoustic wave adjacent each other in the direction of propagation of the surface acoustic wave is connected in series to a resonator having one or a plurality of inter-digital transducers for exciting and receiving a surface acoustic wave. A cutoff frequency on the high-frequency side of the pass band of the longitudinally-coupled double-mode resonator filter and the antiresonant frequency of the resonator are substantially equal. In the surface acoustic wave filter, the sharpness in the vicinity of the cutoff frequency on the high-frequency side of the pass band is high, sufficient attenuation can be obtained, and the input and output impedance matching state is good.

Abstract: In an organic electroluminescent device having a carrier transport layer and an emitting layer which are composed of an organic material provided between a hole injection electrode and an electron injection electrode, a dopant for transporting carriers is doped into the carrier transport layer and/or a dopant for transporting carriers or moving excitation energy is doped into the emitting

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.

Abstract: In a surface acoustic wave device comprising a substrate of lithium tantalate or lithium niobate, and interdigital electrodes formed on the substrate and made of a thin film consisting primarily of aluminum, the interdigital electrodes are optimized in the ratio of the thickness of the film to the period of a plurality of electrode digits connected to a common terminal with propagation loss taken as an objective function. The ratio is set in the range of 0.03 to 0.10 to ensure a lower propagation loss than in the prior art.

Abstract: The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.