Abstract: An oxide semiconductor device has an improved withstand voltage when an inverse voltage is applied, while suppressing diffusion of different types of materials to a Schottky interface. The oxide semiconductor device includes an n-type gallium oxide epitaxial layer, p-type oxide semiconductor layers of an oxide that is a different material from the material for the gallium oxide epitaxial layer, a dielectric layer formed to cover at least part of a side surface of the oxide semiconductor layer, an anode electrode, and a cathode electrode. Hetero pn junctions are formed between the lower surfaces of the oxide semiconductor layers and a gallium oxide substrate or between the lower surfaces of the oxide semiconductor layers and the gallium oxide epitaxial layer.

Abstract: A substrate is made of gallium-nitride-based material. The n-type layer is disposed on a first surface of the substrate. A p-type layer is disposed on the n-type layer, and constitutes, along with the n-type layer, a semiconductor layer on the first surface of the substrate, the semiconductor layer being provided with a mesa shape having a bottom surface, a side surface, and a top surface. An anode electrode is disposed on the p-type layer. A cathode electrode is disposed on a second surface of the substrate. An insulating film continuously extends over the bottom surface and the top surface to cover the side surface. The top surface is provided with at least one trench. The at least one trench includes a trench filled with the insulating film.

Abstract: A p-type oxide semiconductor is prevented from being oxidized by oxygen in an n-type oxide semiconductor even if the p-type oxide semiconductor is provided as a termination structure in the n-type oxide semiconductor. A semiconductor device includes an n-type gallium oxide substrate, an anode electrode joined to the n-type gallium oxide substrate, and a cathode electrode provided on the n-type gallium oxide substrate. Current flows between the anode electrode and the cathode electrode via the n-type gallium oxide substrate provided between the anode electrode and the cathode electrode. The semiconductor device further includes a p-type oxide semiconductor layer provided adjacent to a junction between the anode electrode and the n-type gallium oxide substrate, and a nitride layer provided between the p-type oxide semiconductor layer and the n-type gallium oxide substrate.

Abstract: A p-type oxide semiconductor is prevented from being oxidized by oxygen in an n-type oxide semiconductor even if the p-type oxide semiconductor is provided as a termination structure in the n-type oxide semiconductor. A semiconductor device includes an n-type gallium oxide substrate, an anode electrode joined to the n-type gallium oxide substrate, and a cathode electrode provided on the n-type gallium oxide substrate. Current flows between the anode electrode and the cathode electrode via the n-type gallium oxide substrate provided between the anode electrode and the cathode electrode. The semiconductor device further includes a p-type oxide semiconductor layer provided adjacent to a junction between the anode electrode and the n-type gallium oxide substrate, and a nitride layer provided between the p-type oxide semiconductor layer and the n-type gallium oxide substrate.

Abstract: A method for manufacturing a photovoltaic device capable of suppressing decreases in an open-circuit voltage and a fill factor or suppressing the occurrence of a current leak. The method for manufacturing a photovoltaic device includes: (a) forming a pyramidal texture on a first main surface of a silicon substrate; (b) forming a first silicate glass on the first main surface; (c) forming a second silicate glass on the first silicate glass; (d) diffusing the impurities of the first conductivity type contained in the first silicate glass to the first main surface of the silicon substrate; (e) forming a third silicate glass on the second silicate glass; and (f) diffusing impurities of a second conductivity type to a second main surface of the silicon substrate after (e).

Abstract: A photoelectric conversion element includes: a photoelectric conversion layer; and first and second electrodes formed on surfaces of the photoelectric conversion layer, wherein at least one of the first and second electrodes includes a translucent conductive base layer made of a translucent conductive material, and a translucent conductive mesh layer selectively buried in the translucent conductive base layer, having electrical resistivity lower than electrical resistivity of the translucent conductive base layer, and formed in a translucent conductive film pattern.

Abstract: A solar cell is provided that includes: a solar-battery cell that has a pn junction; a light-receiving-surface side electrode that includes a plurality of grid electrodes that are provided so as to extend in one direction at a given spacing on a light receiving surface of the solar-battery cell, and that collect a photoelectrically-converted charge; and a back-surface electrode that is provided on a back surface that opposes to the light receiving surface of the solar-battery cell. The grid electrode includes a first seed surface that comes into contact with the light receiving surface of the solar-battery cell, a second seed surface that is upright to the first seed surface, and is connected to the first seed surface, and a plated layer that comes into contact with the first seed surface and the second seed surface.

Abstract: A first amorphous silicon i layer and an amorphous silicon p layer are provided on a first main surface, side surfaces, and a peripheral portion of a second main surface of an n-type silicon substrate. A first ITO layer is provided over the first main surface and the side surfaces, a second amorphous silicon i layer and an amorphous silicon n layer are provided on the second main surface, and a second ITO layer having a smaller area than the n-type silicon substrate is provided thereon excluding the peripheral portion. On the peripheral portion of the second main surface, a structure, in which the first amorphous silicon i layer, the amorphous silicon p layer, the second amorphous silicon i layer, and the amorphous silicon n layer are laminated in this order, is provided.

Abstract: An evaporator cell (100), which is adapted for evaporating, in particular, a high-melting evaporant, includes a crucible (10) for receiving the evaporant, said crucible including a crucible bottom (11), a side wall (12) which extends in an axial direction of the crucible (10), and a crucible opening (13), and a heating device (20) with a heating resistor (21), which has a plurality of heating zones (21.1, 21.2), which are arranged on an outside surface of the crucible (10) and extend axially along the crucible (10), wherein the heating zones (21.1, 21.2) are equipped for multilateral resistance heating and/or electron beam heating of the crucible (10), and wherein the heating zones (21.1, 21.2) are constructed in such a manner that a heating current through the heating resistor (21), which is formed for example by a resistance sleeve, flows in parallel and in the same sense through all heating zones (21.1, 21.2). A method of operating the evaporator cell is also described.