Patents by Inventor Tatsuru Matsuoka

Tatsuru Matsuoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515143
    Abstract: There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: November 29, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Tatsuru Matsuoka
  • Publication number: 20220028679
    Abstract: There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate
    Type: Application
    Filed: October 8, 2021
    Publication date: January 27, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi HARADA, Yoshitomo HASHIMOTO, Tatsuru MATSUOKA
  • Patent number: 11164741
    Abstract: There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: November 2, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi Harada, Yoshitomo Hashimoto, Tatsuru Matsuoka
  • Publication number: 20210296110
    Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).
    Type: Application
    Filed: June 2, 2021
    Publication date: September 23, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi HARADA, Tatsuru MATSUOKA, Yoshitomo HASHIMOTO
  • Patent number: 11094532
    Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: August 17, 2021
    Assignee: Kokusai Electric Corporation
    Inventors: Atsushi Sano, Kimihiko Nakatani, Tatsuru Matsuoka, Kenji Kameda, Satoshi Shimamoto
  • Patent number: 11056337
    Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).
    Type: Grant
    Filed: August 7, 2020
    Date of Patent: July 6, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi Harada, Tatsuru Matsuoka, Yoshitomo Hashimoto
  • Patent number: 10910214
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: February 2, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Masanori Nakayama, Masaya Nagato, Tatsuru Matsuoka, Hiroki Tamashita, Takafumi Nitta, Satoshi Shimamoto
  • Publication number: 20200402788
    Abstract: There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 24, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo HASHIMOTO, Tatsuru MATSUOKA
  • Publication number: 20200373151
    Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).
    Type: Application
    Filed: August 7, 2020
    Publication date: November 26, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi HARADA, Tatsuru MATSUOKA, Yoshitomo HASHIMOTO
  • Patent number: 10804100
    Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: October 13, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko Nakatani, Kenji Kameda, Atsushi Sano, Tatsuru Matsuoka
  • Patent number: 10790136
    Abstract: There is provided a technique that includes (a) forming a film containing silicon, carbon and nitrogen having a carbon concentration within a range from 10 at % to 15 at % on a substrate; (b) performing an oxidation process with respect to the substrate where the film is exposed on a surface thereof; and (c) performing a process using hydrogen fluoride with respect to the substrate where the film is exposed on the surface thereof after the oxidation process is performed.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: September 29, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tatsuru Matsuoka, Yoshitomo Hashimoto
  • Patent number: 10770287
    Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: September 8, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi Harada, Tatsuru Matsuoka, Yoshitomo Hashimoto
  • Patent number: 10755921
    Abstract: A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). A gas purge of a space where the substrate is located and vacuumization of the space without gas supply are not performed between the act (a) and the act (b) and between the act (c) and the act (d).
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 25, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Tatsuru Matsuoka
  • Publication number: 20200152444
    Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Atsushi SANO, Kimihiko NAKATANI, Tatsuru MATSUOKA, Kenji KAMEDA, Satoshi SHIMAMOTO
  • Patent number: 10626502
    Abstract: There is provided a technique that includes arranging a plurality of substrates inside a process container in a vertical direction; and forming a film on each of the plurality of substrates by supplying a process gas into the process container. The act of forming the film includes: supplying the process gas into the process container; and performing pressure control such that a pressure inside the process container becomes a process pressure. A start timing of the act of supplying the process gas is adjusted with respect to a start timing of the act of performing the pressure control to adjust a thickness of a film formed on a substrate arranged on an upper portion of the plurality of substrates.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: April 21, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Tatsuru Matsuoka
  • Publication number: 20190393025
    Abstract: There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate
    Type: Application
    Filed: June 18, 2019
    Publication date: December 26, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi HARADA, Yoshitomo HASHIMOTO, Tatsuru MATSUOKA
  • Publication number: 20190267230
    Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).
    Type: Application
    Filed: February 26, 2019
    Publication date: August 29, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi HARADA, Tatsuru MATSUOKA, Yoshitomo HASHIMOTO
  • Publication number: 20190259603
    Abstract: There is provided a technique that includes (a) forming a film containing silicon, carbon and nitrogen having a carbon concentration within a range from 10 at % to 15 at % on a substrate; (b) performing an oxidation process with respect to the substrate where the film is exposed on a surface thereof; and (c) performing a process using hydrogen fluoride with respect to the substrate where the film is exposed on the surface thereof after the oxidation process is performed.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 22, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tatsuru MATSUOKA, Yoshitomo HASHIMOTO
  • Publication number: 20190096660
    Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.
    Type: Application
    Filed: September 18, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko NAKATANI, Kenji KAMEDA, Atsushi SANO, Tatsuru MATSUOKA
  • Publication number: 20180347047
    Abstract: There is provided a technique that includes arranging a plurality of substrates inside a process container in a vertical direction; and forming a film on each of the plurality of substrates by supplying a process gas into the process container. The act of forming the film includes: supplying the process gas into the process container; and performing pressure control such that a pressure inside the process container becomes a process pressure. A start timing of the act of supplying the process gas is adjusted with respect to a start timing of the act of performing the pressure control to adjust a thickness of a film formed on a substrate arranged on an upper portion of the plurality of substrates.
    Type: Application
    Filed: May 25, 2018
    Publication date: December 6, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Tatsuru MATSUOKA