Patents by Inventor Tatsushi Kaneko

Tatsushi Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200285152
    Abstract: A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 10, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshinori Matsui, Masayoshi Sagehashi, Tatsushi Kaneko, Akihiro Seki, Satoshi Watanabe
  • Patent number: 8921025
    Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R1 is H, CH2 or CF3, R2 is an acid labile group, R3 is H or CO2CH3, X is O, S, CH2 or CH2CH2, 0.01?a<1 and 0.01?b<1. When processed by ArF lithography, the composition forms a pattern with a satisfactory mask fidelity and a minimal LWR.
    Type: Grant
    Filed: June 3, 2010
    Date of Patent: December 30, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tatsushi Kaneko, Koji Hasegawa, Tsunehiro Nishi
  • Publication number: 20100310986
    Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R1 is H, CH2 or CF3, R2 is an acid labile group, R3 is H or CO2CH3, X is O, S, CH2 or CH2CH2, 0.01?a<1 and 0.01?b<1. When processed by ArF lithography, the composition forms a pattern with a satisfactory mask fidelity and a minimal LWR.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 9, 2010
    Inventors: Tatsushi KANEKO, Koji HASEGAWA, Tsunehiro NISHI
  • Patent number: 7771913
    Abstract: There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: August 10, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tatsushi Kaneko, Jun Hatakeyama, Yuji Harada
  • Patent number: 7368218
    Abstract: A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development. The composition also has excellent dry etching resistance.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: May 6, 2008
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Tatsushi Kaneko
  • Publication number: 20070231738
    Abstract: There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can-be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 4, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tatsushi Kaneko, Jun Hatakeyama, Yuji Harada
  • Patent number: 7255973
    Abstract: A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: August 14, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Tatsushi Kaneko
  • Patent number: 7235343
    Abstract: Photoacid generators have formula (1) wherein R1 and R2 are alkyl, or R1 and R2, taken together, may form a C4–C6 ring structure with sulfur, R is hydrogen or alkyl, R? is hydrogen, alkyl, alkoxyl or nitro, n is 1 to 6, and Y? is alkylsulfonate, arylsulfonate, bisalkylsulfonylimide or trisalkylsulfonylmethide.
    Type: Grant
    Filed: May 11, 2004
    Date of Patent: June 26, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Youichi Ohsawa, Katsuhiro Kobayashi, Tatsushi Kaneko
  • Publication number: 20050227173
    Abstract: A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.
    Type: Application
    Filed: April 8, 2005
    Publication date: October 13, 2005
    Inventors: Jun Hatakeyama, Tatsushi Kaneko
  • Publication number: 20050227174
    Abstract: A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development. The composition also has excellent dry etching resistance.
    Type: Application
    Filed: April 8, 2005
    Publication date: October 13, 2005
    Inventors: Jun Hatakeyama, Tatsushi Kaneko
  • Publication number: 20040229162
    Abstract: Photoacid generators have formula (1) wherein R1 and R2 are alkyl, or R1 and R2, taken together, may form a C4-C6 ring structure with sulfur, R is hydrogen or alkyl, R′ is hydrogen, alkyl, alkoxyl or nitro, n is 1 to 6, and Y− is alkylsulfonate, arylsulfonate, bisalkylsulfonylimide or trisalkylsulfonylmethide. Chemically amplified resist compositions comprising the same have improved resolution, thermal stability, storage stability and minimized line edge roughness.
    Type: Application
    Filed: May 11, 2004
    Publication date: November 18, 2004
    Inventors: Youichi Ohsawa, Katsuhiro Kobayashi, Tatsushi Kaneko
  • Patent number: 6511785
    Abstract: A chemically amplified positive resist composition comprising a base resin and a compound containing two to six functional groups, specifically alkenyloxy, acetal and ortho-ester groups in the molecule is suitable for forming a contact hole pattern by the thermal flow process.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: January 28, 2003
    Assignee: Shin Etsu Chemical Co., Ltd.
    Inventors: Katsuya Takemura, Kenji Koizumi, Tatsushi Kaneko, Toyohisa Sakurada
  • Patent number: 6395453
    Abstract: There are disclosed a photoresist composition containing at least an &agr;,&bgr;-unsaturated ketone compound, and a patterning method comprising a step of application of a photoresist composition containing at least an &agr;,&bgr;-unsaturated ketone compound to a substrate, a step of, after a heat treatment, exposure with a high energy ray having a wavelength of 500 nm or less, X-ray or electron ray through a photomask, and a step of development with a developer. According to the present invention, there are provided a photoresist composition exhibiting excellent stability as for sensitivity against long term storage and environmental temperature variation, and a patterning method utilizing the photoresist composition.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: May 28, 2002
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tatsushi Kaneko, Kenji Koizumi, Satoshi Watanabe, Yoshitaka Yanagi
  • Patent number: 6004478
    Abstract: A silacyclohexane compound of the formulas (I) ##STR1## wherein R represents an organic residue, ##STR2## represents an unsubstituted or substituted silicon-containing cyclohexylene group or a 1,4-cyclohexylene group, ##STR3## represents an unsubstituted or substituted phenylene, an unsubstituted or substituted silicon-containing cyclohexylene group or trans-4-sila-1,4-cyclohexylene group, or a 1,4-cyclohexylene group provided that at least one of these residues represents a silicon-containing cyclohexylene group, j, k and l are, respectively, 0 or 1, L.sub.1 and L.sub.2, respectively, represent H or F, m and n are, respectively, 0, 1 or 2 provided that m+n=2, 3 or 4, and X represents H, F or Cl. A liquid crystal composition comprising the silacyclohexane compound of the above formula is also described, along with a liquid crystal device comprising the composition.
    Type: Grant
    Filed: March 15, 1996
    Date of Patent: December 21, 1999
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tsutomu Ogihara, Tatsushi Kaneko, Kazuyuki Asakura, Takeshi Kinsho, Mutsuo Nakashima
  • Patent number: 5980778
    Abstract: The invention presents an excellent liquid crystal display composition possessing a negative dielectric anisotropy, comprising one or more compounds selected from the group consisting of formulas I, II, III, IV and V, ##STR1## where R.sup.1 is alkyl, alkoxyalkyl, mono- or difluoroalkyl, or alkenyl, with each group having 2 to 7 carbon atoms; h, i, j, and k denote 0 or 1 with proviso that i+j=1; m is 0, 1 or 2; a six-membered ring expressed by A, B, or C respectively represents any one of trans-1-sila-1,4-cyclohexylene, trans-4-sila-1,4-cyclohexylene, or trans-1,4-cyclohexylene group; L represents F; and L.sup.1 and L.sup.2 represent H or F; n is 0, 1 or 2; and R.sup.2 is H, R.sup.1 or OR.sup.1, in which at least one compound thereof contains trans-1-sila-1,4-cyclohexylene group or trans-4-sila-1,4-cyclohexylene group.
    Type: Grant
    Filed: October 16, 1996
    Date of Patent: November 9, 1999
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tatsushi Kaneko, Tsutomu Ogihara
  • Patent number: 5951913
    Abstract: A liquid crystal composition having a liquid crystal component with a chemical structure of two saturated rings connected directly to one another, and an additional structural isomer thereof having a silane atom in a different position from the first component and having the structure set forth in formula (1) hereinbelow. ##STR1## This composition provides an improved effect with respect to enhancement in both response speed and T.sub.NI (nematic-isotropic transition temperature) as a high voltage hold ratio as required for TFT driving in addition to also lowering the voltage.
    Type: Grant
    Filed: May 15, 1997
    Date of Patent: September 14, 1999
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tsutomu Ogihara, Tatsushi Kaneko, Kenji Koizumi, Mutsuo Nakashima
  • Patent number: 5868961
    Abstract: A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes a linear-chain alkyl group with 1-10 carbon atoms, a branched-chain alkyl group with 3-8 carbon atoms, a mono- or di-fluoroalkyl group with 1-10 carbon atoms, an alkoxyalkyl group with 2-7 carbon atoms, or an alkenyl group with 2-8 carbon atoms. ##STR2## is trans-1-silacyclohexylene or trans-4-silacyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3. X denotes a R, OR, CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, --(O).sub.m --CY.sub.1 .dbd.CX.sub.1 X.sub.2 (m denotes 0 or 1, Y.sub.1 and X.sub.1 respectively denote H, F or Cl, and X.sub.2 denotes F or Cl) or --O--C.sub.r F.sub.s H.sub.2r+1-s is (r denotes an integral of 2 to 4 and s denotes an integral of 1 to 7) group. Y denotes H or F. Z denotes H or F.
    Type: Grant
    Filed: August 11, 1995
    Date of Patent: February 9, 1999
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tsutomu Ogihara, Takeshi Kinsho, Tatsushi Kaneko, Ryuichi Saito, Hideshi Kurihara
  • Patent number: 5866037
    Abstract: Liquid crystal compositions which can improve the low .DELTA.n (refractive index anisotropy) of conventional liquid crystal compositions containing a silacyclohexane compound and which retain a low viscosity and hence show no decrease in response speed. Liquid crystal compositions having a high .DELTA.n of 0.13 to 0.25, a low viscosity of 30 cp or less, a low threshold voltage and a high voltage holding ratio can be obtained by adding thereto, as a required component, a compound having both a silacyclohexane ring and a tolan structure, or a miture of a compound having a silacyclohexane ring and a compound having a tolan structure.
    Type: Grant
    Filed: March 31, 1997
    Date of Patent: February 2, 1999
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tsutomu Ogihara, Tatsushi Kaneko, Toshiaki Takahashi, Mutsuo Nakashima, Takeshi Kinsho, Ryuichi Saito, Hideshi Kurihara
  • Patent number: 5851426
    Abstract: This invention provides twisted nematic liquid crystal compositions obtained by adding a cyclohexane ring-containing optically active compound of the following general formula (1) to a mixture of nematic liquid crystal compounds including at least one silacyclohexane compound, as well as guest-host liquid crystal compositions and liquid crystal display devices utilizing the same.
    Type: Grant
    Filed: June 12, 1997
    Date of Patent: December 22, 1998
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tatsushi Kaneko, Tsutomu Ogihara, Mutsuo Nakashima
  • Patent number: 5762826
    Abstract: A liquid crystal composition comprising one or more types compounds represented by general formula II: ##STR1## and one or more types of compounds selected from the group consisting of: ##STR2## wherein R, rings A and B, X, Y1, Y2, Y3, Y4 and m are defined herein.
    Type: Grant
    Filed: December 21, 1995
    Date of Patent: June 9, 1998
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Tatsushi Kaneko, Tsutomu Ogihara, Takeshi Kinsho, Kazuyuki Asakura, Mutsuo Nakashima