Abstract: A heat insulating, heat storing, and heat generating material includes first fibers having a function of generating heat through moisture absorption, second fibers having a diameter smaller than a diameter of the first fibers, and a binding material binding together the first fibers, binding together the second fibers, and binding together the first fibers and the second fibers. The binding material contains a thermoplastic resin.

Abstract: A force detection apparatus includes a first member, a second member placed to be opposed to the first member, a sensor device placed between the first member and the second member and including a force detection element having at a piezoelectric element that outputs a signal according to an external force, and a pressurization bolt provided in an outer periphery of the sensor device in a plan view as seen from a direction in which the first member and the second member overlap and pressurizing the sensor device, wherein the first member has a groove which is between the sensor device and the pressurization bolt in the plan view.

Abstract: A force detection apparatus includes a first member, a second member placed to be opposed to the first member, a sensor device placed between the first member and the second member and including a force detection element having at a piezoelectric element that outputs a signal according to an external force, and a pressurization bolt provided in an outer periphery of the sensor device in a plan view as seen from a direction in which the first member and the second member overlap and pressurizing the sensor device, wherein the first member has a groove which is between the sensor device and the pressurization bolt in the plan view.

Abstract: Provided is a piezoelectric element that has a first electrode, a piezoelectric layer provided on the first electrode, and a second electrode provided on the piezoelectric layer, an average grain size of crystal grains aligned in a planar direction within 15° from a (100) plane is less than the average grain size of the crystal grains facing a planar direction inclined by more than 15° from the (100) plane, in a case in which the crystal orientation of the piezoelectric layer is analyzed using an electron beam backscatter diffraction method (EBSD).

Abstract: Provided is a piezoelectric element that has a first electrode, a piezoelectric layer provided on the first electrode, and a second electrode provided on the piezoelectric layer, an average grain size of crystal grains aligned in a planar direction within 15° from a (100) plane is less than the average grain size of the crystal grains facing a planar direction inclined by more than 15° from the (100) plane, in a case in which the crystal orientation of the piezoelectric layer is analyzed using an electron beam backscatter diffraction method (EBSD).

Abstract: A method of manufacturing a piezoelectric vibration device having a surface acoustic wave element includes a step of forming a functional film adapted to increase a velocity of a wave on a surface of the surface acoustic wave element. Further, the Young's modulus of the functional film is higher than the Young's modulus of each of the excitation electrode and the piezoelectric body, and the density of the functional film is lower than the density of each of the excitation electrode and the piezoelectric body. Thus, it is possible to develop the frequency rise due to the elastic modulus rise while suppressing the influence of the frequency drop due to the mass attachment effect to thereby raise the resonant frequency of the surface acoustic wave element.

Abstract: A semiconductor device includes: a substrate having a first surface; an insulation layer; a semiconductor layer disposed to the first surface of the substrate with the insulation layer interposed between the semiconductor layer and the first surface; and a piezoelectric layer that is positioned between the first surface and the semiconductor layer, and disposed in a region included and interposed in the insulation layer.

Abstract: A semiconductor device includes: an insulating layer selectively formed on the semiconductor base material; a first semiconductor layer made of single-crystal and formed on the semiconductor base material that is exposed below the insulating layer, the first semiconductor layer having an opening that exposes the semiconductor base material; an opening plane exposing a side face of the first semiconductor layer and provided below the support film, the second semiconductor layer and the first semiconductor layer by using the mask pattern as a mask; a portion defining a hollow part between the second semiconductor layer and the semiconductor base material; a first insulating film formed in the hollow part; and a second insulating film formed above the semiconductor base material on which the first insulating film is formed.

Abstract: A semiconductor device includes: a substrate having a first surface; an insulation layer; a semiconductor layer disposed to the first surface of the substrate with the insulation layer interposed between the semiconductor layer and the first surface; and a piezoelectric layer that is positioned between the first surface and the semiconductor layer, and disposed in a region included and interposed in the insulation layer.

Abstract: A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gate electrode that is formed on the second semiconductor layer; first conductive-source and drain layers that are formed in the second semiconductor layer and are arranged at sides of the gate electrode; and a first wiring layer that connects the first gate electrode to the first semiconductor layer.

Abstract: A method of manufacturing a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate; forming a second semiconductor layer above the first semiconductor layer, the second semiconductor layer having a smaller selection ratio of wet-etching than the first semiconductor layer; forming a hole having the semiconductor substrate as a bottom face in a supporting member holding area by removing by etching the second semiconductor layer and the first semiconductor layer in the supporting member holding area; forming a supporting member film above the semiconductor substrate to fill in the hole and to cover the second semiconductor layer; forming a mask pattern above the supporting member film, the mask pattern covering a supporting member area and exposing another area; dry-etching the second semiconductor layer and the first semiconductor layer in sequence using the mask pattern as a mask to form a supporting member abutting on the semiconductor substrate at the bottom face of t

Abstract: A semiconductor device includes: a semiconductor base material; an insulating layer selectively formed on the semiconductor base material; a first semiconductor layer made of single-crystal and formed on the semiconductor base material that is exposed below the insulating layer, the first semiconductor layer having an opening that exposes the semiconductor base material; a second semiconductor layer made of a single-crystal whose wet-etching selectivity is smaller than a wet-etching selectivity of the first semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having the opening that exposes the semiconductor base material; a polycrystalline layer made of the same composition as the second semiconductor layer, the polycrystalline layer being formed on the insulating layer; a support film formed on a whole upper face of the semiconductor base material and filling the opening; a mask pattern formed on the support film so as to continuously cover at least a part of

Abstract: A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gate electrode that is formed on the second semiconductor layer; first conductive-source and drain layers that are formed in the second semiconductor layer and are arranged at sides of the gate electrode; and a first wiring layer that connects the first gate electrode to the first semiconductor layer.

Abstract: A semiconductor device includes: a semiconductor layer portion provided on an insulating layer, the semiconductor layer portion becoming an element formation region; a gate insulating layer provided on the semiconductor layer portion; a gate electrode provided on the gate insulating layer; and an impurity region provided in the semiconductor layer portion, the impurity region becoming a source or drain region. The semiconductor layer portion is provided with a recess and an isolation insulating layer formed by filling the recess with an insulating material.