Abstract: Disclosed herein is a presumably defective portion decision apparatus, including: an arithmetic operation section configured to divide a level difference included in level difference data which indicate a level difference distribution on the surface of a semiconductor device into two or more unit level differences in the depthwise direction of the level difference and determine, for each of the unit level differences obtained by the division, a relationship between the height of a contour line at a level difference position of an upper face and an area of an opening surrounded by the contour line to decide presence or absence of a presumably defective portion.

Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Abstract: A deposition mask with which position precision of a passage hole is improved and deposition can be conducted precisely and a manufacturing method thereof are provided. A mask body made of a metal thin film is fixed and tightly mounted on a frame body having an opening. The mask body has at least one pattern region including a plurality of passage holes for letting through a deposition material, a stress relaxation region including a plurality of fine holes provided at the periphery of the pattern region, and a holding region provided at the periphery of the stress relaxation region. The mask body is tightly mounted on the frame body at a holding region.

Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin.

Abstract: A fluid-structure coupled numerical simulation method is provided. The method uses a finite volume method employing an orthogonal mesh and a computer and memory setting a solid area based on a solid rate inside a mesh and at a tangent position to each mesh, including the steps of: setting initial and boundary conditions of a moving film structure; setting a velocity boundary in the tangent direction of the film structure by computing a position and shape thereof; and computing a curvature thereof. The method further includes the step of computing a pressure balance based on a balance between a pressure obtained from a fluid computation and a repulsive force obtained from the tension and curvature of the film structure to implement processing of a mutually-coupled phenomenon. A shift amount of the film surface for each time of said computing steps is simulated using the same program.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: A fluid-structure coupled numerical simulation method is provided. The method uses a finite volume method employing an orthogonal mesh and a computer and memory setting a solid area based on a solid rate inside a mesh and at a tangent position to each mesh, including the steps of: setting initial and boundary conditions of a moving film structure; setting a velocity boundary in the tangent direction of the film structure by computing a position and shape thereof; and computing a curvature thereof. The method further includes the step of computing a pressure balance based on a balance between a pressure obtained from a fluid computation and a repulsive force obtained from the tension and curvature of the film structure to implement processing of a mutually-coupled phenomenon. A shift amount of the film surface for each time of said computing steps is simulated using the same program.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

Abstract: Disclosure herein is a hybridization detecting unit including, a reaction area for providing a field for hybridization between nucleic acid for detection and target nucleic acid, and opposed electrodes disposed so that an electric field can be applied to a medium stored or retained in the reaction area, wherein an electrode surface of at least one of the opposed electrodes has depression parts.

Abstract: It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin.

Abstract: A deposition mask with which position precision of a passage hole is improved and deposition can be conducted precisely and a manufacturing method thereof are provided. A mask body made of a metal thin film is fixed and tightly mounted on a frame body having an opening. The mask body has at least one pattern region including a plurality of passage holes for letting through a deposition material, a stress relaxation region including a plurality of fine holes provided at the periphery of the pattern region, and a holding region provided at the periphery of the stress relaxation region. The mask body is tightly mounted on the frame body at a holding region.

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer.

Abstract: The present invention relates to a carbonaceous material including a cylindrical carbonaceous molecule; and an atom or atomic group introduced thereinto, wherein a chemical potential of a hydrogen molecule near the cylindrical carbonaceous molecule introduced the atom or atomic group thereinto is lower than a chemical potential of another hydrogen molecule near a cylindrical carbonaceous molecule which is not introduced the atom or atomic group thereinto, the position of the latter hydrogen molecule being equivalent to that of the former hydrogen molecule to the cylindrical carbonaceous molecule. With this configuration, it is possible to realize greatly improved hydrogen-occluding performance (or capability of occluding a large amount of hydrogen under normal pressure).

Abstract: A cathode ray tube having an internal magnetic shield formed of an inner magnetic plate and an outer magnetic plate which intersect at an acute angle, the distance from the upper terminal end of the inner magnetic plate to the inner surface of the panel, and the distance from the upper end of the outer magnetic plate to the inner surface of the panel being adjusted so as to satisfy a predetermined relationship, thus improving the magnetic shield effect.